Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment

Wan Hsin Chen; Naoya Kawakami; Jing Wen Hsueh; Lai Hsiang Kuo; Jiun Yu Chen; Ting Wei Liao; Chia Nung Kuo; Chin Shan Lue; Yu Ling Lai; Yao Jane Hsu; Der Hsien Lien; Chenming Hu; Jyh Pin Chou; Meng Fan Luo; Chun Liang Lin

doi:10.1021/acsami.2c21150

Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment

Wan Hsin Chen, Naoya Kawakami, Jing Wen Hsueh, Lai Hsiang Kuo, Jiun Yu Chen, Ting Wei Liao, Chia Nung Kuo, Chin Shan Lue, Yu Ling Lai, Yao Jane Hsu, Der Hsien Lien, Chenming Hu, Jyh Pin Chou, Meng Fan Luo, Chun Liang Lin

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Layered transition metal dichalcogenides (TMDs) are two-dimensional materials exhibiting a variety of unique features with great potential for electronic and optoelectronic applications. The performance of devices fabricated with mono or few-layer TMD materials, nevertheless, is significantly affected by surface defects in the TMD materials. Recent efforts have been focused on delicate control of growth conditions to reduce the defect density, whereas the preparation of a defect-free surface remains challenging. Here, we show a counterintuitive approach to decrease surface defects on layered TMDs: a two-step process including Ar ion bombardment and subsequent annealing. With this approach, the defects, mainly Te vacancies, on the as-cleaved PtTe₂ and PdTe₂ surfaces were decreased by more than 99%, giving a defect density <1.0 × 10¹⁰ cm^-2, which cannot be achieved solely with annealing. We also attempt to propose a mechanism behind the processes.

Original language	English
Pages (from-to)	16153-16161
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	15
Issue number	12
DOIs	https://doi.org/10.1021/acsami.2c21150
State	Published - 29 Mar 2023

Keywords

2D materials
defects
density functional theory
ion bombardment
reflection high-energy electron diffraction
scanning tunneling microscopy
synchrotron-based photoelectron spectroscopy

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10.1021/acsami.2c21150

The Effect on Catalytic Properties of Transferred Charge in Supported Nanoclusters(2/2)
Luo, M.-F. (PI)
1/08/21 → 30/11/22
Project: Research

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Chen, W. H., Kawakami, N., Hsueh, J. W., Kuo, L. H., Chen, J. Y., Liao, T. W., Kuo, C. N., Lue, C. S., Lai, Y. L., Hsu, Y. J., Lien, D. H., Hu, C., Chou, J. P., Luo, M. F., & Lin, C. L. (2023). Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment. ACS Applied Materials and Interfaces, 15(12), 16153-16161. https://doi.org/10.1021/acsami.2c21150

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abstract = "Layered transition metal dichalcogenides (TMDs) are two-dimensional materials exhibiting a variety of unique features with great potential for electronic and optoelectronic applications. The performance of devices fabricated with mono or few-layer TMD materials, nevertheless, is significantly affected by surface defects in the TMD materials. Recent efforts have been focused on delicate control of growth conditions to reduce the defect density, whereas the preparation of a defect-free surface remains challenging. Here, we show a counterintuitive approach to decrease surface defects on layered TMDs: a two-step process including Ar ion bombardment and subsequent annealing. With this approach, the defects, mainly Te vacancies, on the as-cleaved PtTe2 and PdTe2 surfaces were decreased by more than 99%, giving a defect density <1.0 × 1010 cm-2, which cannot be achieved solely with annealing. We also attempt to propose a mechanism behind the processes.",

keywords = "2D materials, defects, density functional theory, ion bombardment, reflection high-energy electron diffraction, scanning tunneling microscopy, synchrotron-based photoelectron spectroscopy",

author = "Chen, {Wan Hsin} and Naoya Kawakami and Hsueh, {Jing Wen} and Kuo, {Lai Hsiang} and Chen, {Jiun Yu} and Liao, {Ting Wei} and Kuo, {Chia Nung} and Lue, {Chin Shan} and Lai, {Yu Ling} and Hsu, {Yao Jane} and Lien, {Der Hsien} and Chenming Hu and Chou, {Jyh Pin} and Luo, {Meng Fan} and Lin, {Chun Liang}",

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AU - Chen, Wan Hsin

AU - Kawakami, Naoya

AU - Hsueh, Jing Wen

AU - Kuo, Lai Hsiang

AU - Chen, Jiun Yu

AU - Liao, Ting Wei

AU - Kuo, Chia Nung

AU - Lue, Chin Shan

AU - Lai, Yu Ling

AU - Hsu, Yao Jane

AU - Lien, Der Hsien

AU - Hu, Chenming

AU - Chou, Jyh Pin

AU - Luo, Meng Fan

AU - Lin, Chun Liang

PY - 2023/3/29

Y1 - 2023/3/29

N2 - Layered transition metal dichalcogenides (TMDs) are two-dimensional materials exhibiting a variety of unique features with great potential for electronic and optoelectronic applications. The performance of devices fabricated with mono or few-layer TMD materials, nevertheless, is significantly affected by surface defects in the TMD materials. Recent efforts have been focused on delicate control of growth conditions to reduce the defect density, whereas the preparation of a defect-free surface remains challenging. Here, we show a counterintuitive approach to decrease surface defects on layered TMDs: a two-step process including Ar ion bombardment and subsequent annealing. With this approach, the defects, mainly Te vacancies, on the as-cleaved PtTe2 and PdTe2 surfaces were decreased by more than 99%, giving a defect density <1.0 × 1010 cm-2, which cannot be achieved solely with annealing. We also attempt to propose a mechanism behind the processes.

AB - Layered transition metal dichalcogenides (TMDs) are two-dimensional materials exhibiting a variety of unique features with great potential for electronic and optoelectronic applications. The performance of devices fabricated with mono or few-layer TMD materials, nevertheless, is significantly affected by surface defects in the TMD materials. Recent efforts have been focused on delicate control of growth conditions to reduce the defect density, whereas the preparation of a defect-free surface remains challenging. Here, we show a counterintuitive approach to decrease surface defects on layered TMDs: a two-step process including Ar ion bombardment and subsequent annealing. With this approach, the defects, mainly Te vacancies, on the as-cleaved PtTe2 and PdTe2 surfaces were decreased by more than 99%, giving a defect density <1.0 × 1010 cm-2, which cannot be achieved solely with annealing. We also attempt to propose a mechanism behind the processes.

KW - 2D materials

KW - defects

KW - density functional theory

KW - ion bombardment

KW - reflection high-energy electron diffraction

KW - scanning tunneling microscopy

KW - synchrotron-based photoelectron spectroscopy

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DO - 10.1021/acsami.2c21150

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AN - SCOPUS:85148861365

SN - 1944-8244

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SP - 16153

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JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 12

ER -

Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment

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Keywords

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The Effect on Catalytic Properties of Transferred Charge in Supported Nanoclusters(2/2)

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