Top-Illuminated In0.52Al0.48As-Based Avalanche Photodiode with Dual Charge Layers for High-Speed and Low Dark Current Performances

Keyphrases

• Current Performance 100%
• Low Dark Current 100%
• Avalanche Photodiode 100%
• Charge Transport Layers 100%
• Top-illuminated 100%
• M-Layer 66%
• High Sensitivity 33%
• 3-dB Bandwidth 33%
• Electric Field (E-field) 33%
• Error-free 33%
• Backlight 33%
• Responsivity 33%
• Optical Power 33%
• Optical Alignment 33%
• Flip-chip Bonding 33%
• Punch-through 33%
• Low Gain 33%
• Surface Complexes 33%
• Edge Breakdown 33%
• Novel Types 33%
• Guard-ring Structure 33%
• Surface Breakdown 33%

Physics

• Dark Current 100%
• Photodiode 100%
• Optical Power 33%
• Electric Field 33%

Engineering

• Avalanche Photodiode 100%
• Db Bandwidth 33%
• Responsivity 33%
• Chip Bonding 33%
• Launched Optical Power 33%
• Electric Field 33%