Top-Illuminated In0.52Al0.48As-Based Avalanche Photodiode with Dual Charge Layers for High-Speed and Low Dark Current Performances

Yi Han Chen, Jhih Min Wun, Song Lin Wu, Rui Lin Chao, Jack Jia Sheng Huang, Yu Heng Jan, H. S. Chen, C. J. Ni, Hsiang Szu Chang, Emin Chou, Jin Wei Shi

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

A novel type of top-illuminated, etch-mesa In0.52Al0.48As-based avalanche photodiode (APD) with high-speed (>25 Gb/s), low dark current performance has been demonstrated. The 25G APD device is composed of n-side down design with the In0.52Al0.48As multiplication (M) layer buried at the bottom to avoid the issues of surface breakdown and complex guard ring structure. In addition, we demonstrate that the new structure with two charge layers and triple mesas can effectively confine the electric-field within the center of M-layer and minimize the edge breakdown around the periphery of mesa. In contrast to the costly flip-chip bonding package with backside illumination, our demonstrated device is based on a simple top-illuminated structure that includes a large active diameter of 30 μm for easy optical alignment, a reasonable punch-through responsivity (0.7 A/W at 1.31 μm wavelength), and a good 3-dB optical-to-electrical (O-E) bandwidth (22.5 GHz) under low gain operations (MG = ∼3). Furthermore, it can sustain the 3-dB bandwidth of 15 GHz over a wide range of launched optical power (-17 to +4.6 dBm) under a moderate gain (MG = ∼5) operation at 1.31 μm wavelength. High-sensitivity (-16 dBm) for error-free 28 Gb/s operation can also be achieved at 1.55 μm wavelength.

Original languageEnglish
Article number7990500
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume24
Issue number2
DOIs
StatePublished - 1 Mar 2018

Keywords

  • 100 Gbit/sec Ethernet
  • Avalanche photodiode

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