We investigate carrier lifetimes of InAs/GaAs quantum dots (QDs) covered by a thin GaAs1-xSbxlayer by time-resolved photoluminescence (PL). Both the power dependent PL peak shift and the longer decay time confirm the type-II band alignments. Different recombination paths have been identified by temperature dependent measurements. At low temperatures, the long-range recombination with holes trapped in the GaAsSb layer is significant, resulting in non-single-exponential decays. The short-range recombination with holes confined in the band-bending region surrounding the InAs QDs is important at higher temperatures. The variation in decay time across the ground-state and the temporal PL peak redshift further confirm the localization of holes in the GaAsSb layer.
|Number of pages
|Physica Status Solidi (C) Current Topics in Solid State Physics
|Published - 2009
|35th International Symposium on Compound Semiconductors, ISCS 2008 - Rust, Germany
Duration: 21 Sep 2008 → 24 Sep 2008