Ti- and Pt-based Schottky gates for InGaSb p-channel HFET development

Geng Ying Liau, Heng Kuang Lin, Pei Chin Chiu, Han Chieh Ho, Jen Inn Chyi, Chih Hsin Ko, Ta Ming Kuan, Meng Kuei Hsieh, Wen Chin Lee, Clement H. Wann

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Antimonide-based heterostructural p-channel HFET epitaxies consisting of an In0.44Ga0.56Sb quantum well located between AlSb barriers were developed by molecular beam epitaxy. The In0.44Ga 0.56Sb channel layer was compressively strained to enhance hole mobility. Room-temperature Hall measurements to the as-grown materials exhibited a hole mobility as high as 895 cm2/V s. Ti/Pt/Au and Pt/Ti/Pt/Au metals were utilized in Schottky gate metallization processes for evaluating their effects on the device performance. Considering the diffusivity of Pt metals, the devices with as-deposited and annealed Pt-based gates were characterized simultaneously and compared with the ones with Ti-based gates. The devices with Ti-based gates yielded superior dc and rf performances to those with Pt-based gates.

Original languageEnglish
Title of host publication2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
Pages348-351
Number of pages4
DOIs
StatePublished - 2010
Event22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan
Duration: 31 May 20104 Jun 2010

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
Country/TerritoryJapan
CityKagawa
Period31/05/104/06/10

Keywords

  • HFETs
  • InGaSb
  • P-channel

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