Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

Wei Chia Chen; Hao Hsuan Lo; Yue Ming Hsin

doi:10.1149/2162-8777/ad49d6

Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

Wei Chia Chen, Hao Hsuan Lo, Yue Ming Hsin

Research output: Contribution to journal › Article › peer-review

Abstract

This study investigated threshold voltage (V_TH) instability in a Schottky p-GaN gate AlGaN/GaN high-electron-mobility transistor (HEMT) by using the double pulse test (DPT) with a 1 μs pulse width in the ON-state and OFF-state. OFF-state drain biases (V_DS,OFF) of 100-400 V and ON-state drain currents of I_D,ON 1-16 A were applied in the DPT to observe the post-DPT V_TH shift. The ON-state currents did not strongly influence the device’s characteristics after the DPT. However, the OFF-state voltages, particularly V_DS,OFF = 100 and 200 V, exerted notable effects. A TCAD simulation was conducted to investigate the mechanism underlying the V_TH shift after the DPT at various V_DS,OFF and I_D,ON levels.

Original language	English
Article number	055003
Journal	ECS Journal of Solid State Science and Technology
Volume	13
Issue number	5
DOIs	https://doi.org/10.1149/2162-8777/ad49d6
State	Published - May 2024

Keywords

AlGaN/GaN HEMT
double pulse test
threshold voltage

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10.1149/2162-8777/ad49d6

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title = "Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT",

abstract = "This study investigated threshold voltage (VTH) instability in a Schottky p-GaN gate AlGaN/GaN high-electron-mobility transistor (HEMT) by using the double pulse test (DPT) with a 1 μs pulse width in the ON-state and OFF-state. OFF-state drain biases (VDS,OFF) of 100-400 V and ON-state drain currents of ID,ON 1-16 A were applied in the DPT to observe the post-DPT VTH shift. The ON-state currents did not strongly influence the device{\textquoteright}s characteristics after the DPT. However, the OFF-state voltages, particularly VDS,OFF = 100 and 200 V, exerted notable effects. A TCAD simulation was conducted to investigate the mechanism underlying the VTH shift after the DPT at various VDS,OFF and ID,ON levels.",

keywords = "AlGaN/GaN HEMT, double pulse test, threshold voltage",

author = "Chen, {Wei Chia} and Lo, {Hao Hsuan} and Hsin, {Yue Ming}",

note = "Publisher Copyright: {\textcopyright} 2024 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.",

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month = may,

doi = "10.1149/2162-8777/ad49d6",

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volume = "13",

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TY - JOUR

T1 - Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

AU - Chen, Wei Chia

AU - Lo, Hao Hsuan

AU - Hsin, Yue Ming

PY - 2024/5

Y1 - 2024/5

N2 - This study investigated threshold voltage (VTH) instability in a Schottky p-GaN gate AlGaN/GaN high-electron-mobility transistor (HEMT) by using the double pulse test (DPT) with a 1 μs pulse width in the ON-state and OFF-state. OFF-state drain biases (VDS,OFF) of 100-400 V and ON-state drain currents of ID,ON 1-16 A were applied in the DPT to observe the post-DPT VTH shift. The ON-state currents did not strongly influence the device’s characteristics after the DPT. However, the OFF-state voltages, particularly VDS,OFF = 100 and 200 V, exerted notable effects. A TCAD simulation was conducted to investigate the mechanism underlying the VTH shift after the DPT at various VDS,OFF and ID,ON levels.

AB - This study investigated threshold voltage (VTH) instability in a Schottky p-GaN gate AlGaN/GaN high-electron-mobility transistor (HEMT) by using the double pulse test (DPT) with a 1 μs pulse width in the ON-state and OFF-state. OFF-state drain biases (VDS,OFF) of 100-400 V and ON-state drain currents of ID,ON 1-16 A were applied in the DPT to observe the post-DPT VTH shift. The ON-state currents did not strongly influence the device’s characteristics after the DPT. However, the OFF-state voltages, particularly VDS,OFF = 100 and 200 V, exerted notable effects. A TCAD simulation was conducted to investigate the mechanism underlying the VTH shift after the DPT at various VDS,OFF and ID,ON levels.

KW - AlGaN/GaN HEMT

KW - double pulse test

KW - threshold voltage

UR - http://www.scopus.com/inward/record.url?scp=85193784892&partnerID=8YFLogxK

U2 - 10.1149/2162-8777/ad49d6

DO - 10.1149/2162-8777/ad49d6

M3 - 期刊論文

AN - SCOPUS:85193784892

SN - 2162-8769

VL - 13

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 5

M1 - 055003

ER -

Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

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