Thin-film growth rate monitor by normal-incidence reflectance

Fu Rong Huang, Xu Dong Chen, Chun Cheng Wang, Ju Yi Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

An in situ technique for monitoring the growth rate and optical constants of the thin semiconductor layer by the normal-incidence reflectance is proposed. To demonstrate the feasibility of the proposed method, the variation of the air gap between two glasses is used to simulate growth system. We also used the spin coater to thin the thickness of the salad oil to test the performance of the measurement system. The experiments indicate that we can determine the thickness variation and optical constants of the test sample in real time.

Original languageEnglish
Title of host publicationRecent Development in Machining, Materials and Mechanical Technologies
EditorsJyh-Chen Chen, Usuki Hiroshi, Sheng-Wei Lee, Yiin-Kuen Fuh
PublisherTrans Tech Publications Ltd
Pages107-112
Number of pages6
ISBN (Print)9783038354956
DOIs
StatePublished - 2015
EventInternational Conference on Machining, Materials and Mechanical Technologies, IC3MT 2014 - Taipei City, Taiwan
Duration: 31 Aug 20145 Sep 2014

Publication series

NameKey Engineering Materials
Volume656-657
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Conference

ConferenceInternational Conference on Machining, Materials and Mechanical Technologies, IC3MT 2014
Country/TerritoryTaiwan
CityTaipei City
Period31/08/145/09/14

Keywords

  • Growth rate
  • MOCVD
  • Reflectance
  • Thin film

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