Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs

Ray Ming Lin; Tzer En Nee; Mei Ching Tsai; Yuan Hao Chang; Ping Lin Fan; Rong Seng Chang

doi:10.1116/1.1474416

Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs

Ray Ming Lin, Tzer En Nee, Mei Ching Tsai, Yuan Hao Chang, Ping Lin Fan, Rong Seng Chang

Department of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

Abstract

The thickness dependence of strain distribution renormalization on self-organized InAs quantum dots was systematically studied. The photoluminescence (PL) characteristics exhibit that the strain energy between quantum dots (QDs) and wetting layer (WL) is redistributed as the InAs deposition thickness changes. By the temperature dependence of emission energy shift, the dots exhibit the more InAs-like behaviors, while increasing the InAs deposition thickness.

Original language	English
Pages (from-to)	1125-1127
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1474416
State	Published - May 2002

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abstract = "The thickness dependence of strain distribution renormalization on self-organized InAs quantum dots was systematically studied. The photoluminescence (PL) characteristics exhibit that the strain energy between quantum dots (QDs) and wetting layer (WL) is redistributed as the InAs deposition thickness changes. By the temperature dependence of emission energy shift, the dots exhibit the more InAs-like behaviors, while increasing the InAs deposition thickness.",

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AU - Lin, Ray Ming

AU - Nee, Tzer En

AU - Tsai, Mei Ching

AU - Chang, Yuan Hao

AU - Fan, Ping Lin

AU - Chang, Rong Seng

PY - 2002/5

Y1 - 2002/5

N2 - The thickness dependence of strain distribution renormalization on self-organized InAs quantum dots was systematically studied. The photoluminescence (PL) characteristics exhibit that the strain energy between quantum dots (QDs) and wetting layer (WL) is redistributed as the InAs deposition thickness changes. By the temperature dependence of emission energy shift, the dots exhibit the more InAs-like behaviors, while increasing the InAs deposition thickness.

AB - The thickness dependence of strain distribution renormalization on self-organized InAs quantum dots was systematically studied. The photoluminescence (PL) characteristics exhibit that the strain energy between quantum dots (QDs) and wetting layer (WL) is redistributed as the InAs deposition thickness changes. By the temperature dependence of emission energy shift, the dots exhibit the more InAs-like behaviors, while increasing the InAs deposition thickness.

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DO - 10.1116/1.1474416

M3 - 期刊論文

AN - SCOPUS:0036565080

SN - 0734-2101

VL - 20

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

ER -

Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs

Abstract

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