Abstract
We investigated the thermal stability of ZnO:H films deposited by radio frequency magnetron sputtering at room temperature. The lowest resistivity obtained for a ZnO:H film was 1.99 × 10-3ω-cm with a 10 H2Ar flow ratio. The increase in the H2Ar flow ratio during deposition plays an important role in producing better thermal stability ZnO:H films as the result of the increase in the percentage of substitutional Ho in the ZnO:H films. The resistivity of the ZnO:H film with 50 H2Ar flow ratio can be reduced from 3.49 × 10 -3ω-cm to 2.35 × 10-3ω-cm after heat treatment to 300°C.
Original language | English |
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Pages (from-to) | H14-H16 |
Journal | Electrochemical and Solid-State Letters |
Volume | 15 |
Issue number | 1 |
DOIs | |
State | Published - 2012 |