Thermal stability of hydrogen-doped zinc-oxide thin-films

Chi Li Yeh, Shao Ze Tseng, Wei Ting Lin, Chien Cheng Kuo, Sheng Hui Chen

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5 Scopus citations

Abstract

We investigated the thermal stability of ZnO:H films deposited by radio frequency magnetron sputtering at room temperature. The lowest resistivity obtained for a ZnO:H film was 1.99 × 10-3ω-cm with a 10 H2Ar flow ratio. The increase in the H2Ar flow ratio during deposition plays an important role in producing better thermal stability ZnO:H films as the result of the increase in the percentage of substitutional Ho in the ZnO:H films. The resistivity of the ZnO:H film with 50 H2Ar flow ratio can be reduced from 3.49 × 10 -3ω-cm to 2.35 × 10-3ω-cm after heat treatment to 300°C.

Original languageEnglish
Pages (from-to)H14-H16
JournalElectrochemical and Solid-State Letters
Volume15
Issue number1
DOIs
StatePublished - 2012

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