This paper explores a SOI materials technology of combining hydrogen ion implantation, plasma-activated bonding, and thermal-microwave hybrid processes. Through the plasma-activated bonding process, the bonded pair of a hydrogen implanted device wafer and a handle wafer was formed with sufficient high bonding strength by microwave irradiation less than ten minutes. By the thermal-microwave hybrid process, i.e. TM process, a whole eight inch in diameter silicon layer was split from the device wafer and completely transferred onto the handle wafer to fabricate a 8" SOI wafer without additional anneal step within ten minutes. In the study, the examination on bonding strength measurement and inspection with AFM and TEM were also conducted.
|Number of pages||10|
|State||Published - 2005|
|Event||207th ECS Meeting - Quebec, Canada|
Duration: 16 May 2005 → 20 May 2005
|Conference||207th ECS Meeting|
|Period||16/05/05 → 20/05/05|