Thermal-microwave hybrid SOI materials technology

J. T. Cheng, C. H. Huang, Y. K. Hsu, C. L. Chang, H. W. Wang, G. Gan, S. L. Lee, T. H. Lee

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations


This paper explores a SOI materials technology of combining hydrogen ion implantation, plasma-activated bonding, and thermal-microwave hybrid processes. Through the plasma-activated bonding process, the bonded pair of a hydrogen implanted device wafer and a handle wafer was formed with sufficient high bonding strength by microwave irradiation less than ten minutes. By the thermal-microwave hybrid process, i.e. TM process, a whole eight inch in diameter silicon layer was split from the device wafer and completely transferred onto the handle wafer to fabricate a 8" SOI wafer without additional anneal step within ten minutes. In the study, the examination on bonding strength measurement and inspection with AFM and TEM were also conducted.

Original languageEnglish
Number of pages10
StatePublished - 2005
Event207th ECS Meeting - Quebec, Canada
Duration: 16 May 200520 May 2005


Conference207th ECS Meeting


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