Thermal instability of pseudomorphically strained phosphorus doped Si:C alloy

Wei Yen Woon, Yao Teng Chuang, Sheng Hao Wang

Research output: Contribution to journalArticlepeer-review


We study the thermal stability of P doped and undoped pseudomorphically strained Si:C alloy formed by high fluence ion implantation and subsequent solid phase epitaxial regrowth (SPER), under post-annealing conditions far below the β-SiC precipitation threshold. The strain is measured by high resolution X-ray diffractometer (HRXRD) and kinematic simulation. By plotting the differential strain relaxation with respect to post-annealing time, we found much lower deactivation energy at the near surface region while the presence of high P concentration results in more significant strain relaxation. We explain the near surface relaxation by considering the interstitials injection by surface oxide formations during the post annealing process. P in the bulk on the other hand plays the role as additional interstitial kick-out mediator and lowers the thermal stability.

Original languageEnglish
Pages (from-to)85-87
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
StatePublished - 1 Jul 2012


  • Si:C
  • Solid phase epitaxial regrowth
  • Strain


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