We study the thermal stability of P doped and undoped pseudomorphically strained Si:C alloy formed by high fluence ion implantation and subsequent solid phase epitaxial regrowth (SPER), under post-annealing conditions far below the β-SiC precipitation threshold. The strain is measured by high resolution X-ray diffractometer (HRXRD) and kinematic simulation. By plotting the differential strain relaxation with respect to post-annealing time, we found much lower deactivation energy at the near surface region while the presence of high P concentration results in more significant strain relaxation. We explain the near surface relaxation by considering the interstitials injection by surface oxide formations during the post annealing process. P in the bulk on the other hand plays the role as additional interstitial kick-out mediator and lowers the thermal stability.
|Number of pages||3|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|State||Published - 1 Jul 2012|
- Solid phase epitaxial regrowth