Thermal annealing effects on the optical gain of InGaN/GaN quantum well structures

Chii Chang Chen, Tao Hung Hsueh, Yi Sheng Ting, Gou Chung Chi, Chin An Chang, S. C. Wang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this work, the variation of the optical gain in the InGaN/GaN quantum well after thermal annealing is simulated. The potential profile change of the quantum well resulting from the interdiffusion of Ga and In atoms across the interface of the well and the barrier during the thermal treatments is assumed to follow Fick's law. The results show that the thermal annealing can induce an increase of the optical gain in the InGaN/GaN quantum well. The maximum optical gain can be obtained at a diffusion length of 0.4 nm of In and Ga atoms. However, an excessive annealing may result in decreasing the optical gain. There is a good agreement between the experimental data in literature and the optimized diffusion length studied in this work.

Original languageEnglish
Pages (from-to)575-578
Number of pages4
JournalSolid-State Electronics
Volume47
Issue number3
DOIs
StatePublished - Mar 2003

Keywords

  • Annealing
  • Gain
  • GaN
  • InGaN
  • Interdiffusion
  • Quantum well

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