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The understanding of strain-induced device degradation in advanced MOSFETs with process-induced strain technology of 65nm node and beyond

  • M. H. Lin
  • , E. R. Hsieh
  • , Steve S. Chung
  • , C. H. Tsai
  • , P. W. Liu
  • , Y. H. Lin
  • , C. T. Tsai
  • , G. H. Ma

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

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