The understanding of strain-induced device degradation in advanced MOSFETs with process-induced strain technology of 65nm node and beyond

M. H. Lin, E. R. Hsieh, Steve S. Chung, C. H. Tsai, P. W. Liu, Y. H. Lin, C. T. Tsai, G. H. Ma

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

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Engineering