The suppression effect of 830 nm laser irradiation on porous silicon formation

C. C. Chiang, Y. C. Huang, P. C. Juan, F. S. Lo, T. H. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The suppression effect of 830 nm laser irradiation on the formation porous layer p-Type silicon in hydrofluoric (HF) acidbased electrolyte has been investigated. With laser irradiation at 5.0 mW, the porous silicon layer is only few nanometers. We believe the electrochemical reaction on the laser-irradiated surface is suppressed by the laser power because of the induction of the depletion region. In the study, it is shown that the thickness of the porous silicon layer depends on the intensity of the laser power at a fixed irradiation time.

Original languageEnglish
Title of host publicationNanoscale Electrochemistry
EditorsT. Ito, A. Kusoglu
PublisherElectrochemical Society Inc.
Pages1-7
Number of pages7
Edition35
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2015
EventSymposium on Nanoscale Electrochemistry - 228th ECS Meeting - Phoenix, United States
Duration: 11 Oct 201515 Oct 2015

Publication series

NameECS Transactions
Number35
Volume69
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Nanoscale Electrochemistry - 228th ECS Meeting
Country/TerritoryUnited States
CityPhoenix
Period11/10/1515/10/15

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