The structure of GaN-based transverse junction blue LED array for uniform distribution of injected current/carriers

Jin Wei Shi; Shi Hao Guol; C. S. Lin; Jinn Kong Sheu; Kuo Hua Chang; W. C. Lai; C. H. Kuo; C. J. Tun; Jen Inn Chyi

doi:10.1109/JSTQE.2009.2017029

The structure of GaN-based transverse junction blue LED array for uniform distribution of injected current/carriers

Jin Wei Shi, Shi Hao Guol, C. S. Lin, Jinn Kong Sheu, Kuo Hua Chang, W. C. Lai, C. H. Kuo, C. J. Tun, Jen Inn Chyi

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

In this study, we demonstrate a GaN-based transverse junction blue LED array. This device was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and undoped multiple quantum wells (MQWs). Due to the transverse flow of injection carriers, problems related to nonuniform current distribution, nonuniform carrier distribution among different MQWs, and bias-dependent shape of the electroluminescence spectra such as that occurring in traditional GaN-based blue LEDs with vertical p-n junctions and large active area (<1 mm²) are all greatly minimized in our structure.

Original language	English
Article number	4957079
Pages (from-to)	1292-1297
Number of pages	6
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	15
Issue number	4
DOIs	https://doi.org/10.1109/JSTQE.2009.2017029
State	Published - 2009

Keywords

GaN LEDs
White light generation

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10.1109/JSTQE.2009.2017029

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Shi, J. W., Guol, S. H., Lin, C. S., Sheu, J. K., Chang, K. H., Lai, W. C., Kuo, C. H., Tun, C. J., & Chyi, J. I. (2009). The structure of GaN-based transverse junction blue LED array for uniform distribution of injected current/carriers. IEEE Journal on Selected Topics in Quantum Electronics, 15(4), 1292-1297. Article 4957079. https://doi.org/10.1109/JSTQE.2009.2017029

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title = "The structure of GaN-based transverse junction blue LED array for uniform distribution of injected current/carriers",

abstract = "In this study, we demonstrate a GaN-based transverse junction blue LED array. This device was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and undoped multiple quantum wells (MQWs). Due to the transverse flow of injection carriers, problems related to nonuniform current distribution, nonuniform carrier distribution among different MQWs, and bias-dependent shape of the electroluminescence spectra such as that occurring in traditional GaN-based blue LEDs with vertical p-n junctions and large active area (<1 mm2) are all greatly minimized in our structure.",

keywords = "GaN LEDs, White light generation",

author = "Shi, {Jin Wei} and Guol, {Shi Hao} and Lin, {C. S.} and Sheu, {Jinn Kong} and Chang, {Kuo Hua} and Lai, {W. C.} and Kuo, {C. H.} and Tun, {C. J.} and Chyi, {Jen Inn}",

note = "Funding Information: Manuscript received November 26, 2008; revised January 24, 2009 and February 25, 2009. First published May 19, 2009; current version published August 5, 2009. The review of this paper was arranged by Editor N. Tansu. This work was sponsored by the National Science Council of Taiwan under Grant NSC-95-2221-E-008-121-MY3 and Grant NSC 96-2221-E-008-106-MY3.",

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T1 - The structure of GaN-based transverse junction blue LED array for uniform distribution of injected current/carriers

AU - Shi, Jin Wei

AU - Guol, Shi Hao

AU - Lin, C. S.

AU - Sheu, Jinn Kong

AU - Chang, Kuo Hua

AU - Lai, W. C.

AU - Kuo, C. H.

AU - Tun, C. J.

AU - Chyi, Jen Inn

N1 - Funding Information: Manuscript received November 26, 2008; revised January 24, 2009 and February 25, 2009. First published May 19, 2009; current version published August 5, 2009. The review of this paper was arranged by Editor N. Tansu. This work was sponsored by the National Science Council of Taiwan under Grant NSC-95-2221-E-008-121-MY3 and Grant NSC 96-2221-E-008-106-MY3.

PY - 2009

Y1 - 2009

N2 - In this study, we demonstrate a GaN-based transverse junction blue LED array. This device was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and undoped multiple quantum wells (MQWs). Due to the transverse flow of injection carriers, problems related to nonuniform current distribution, nonuniform carrier distribution among different MQWs, and bias-dependent shape of the electroluminescence spectra such as that occurring in traditional GaN-based blue LEDs with vertical p-n junctions and large active area (<1 mm2) are all greatly minimized in our structure.

AB - In this study, we demonstrate a GaN-based transverse junction blue LED array. This device was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and undoped multiple quantum wells (MQWs). Due to the transverse flow of injection carriers, problems related to nonuniform current distribution, nonuniform carrier distribution among different MQWs, and bias-dependent shape of the electroluminescence spectra such as that occurring in traditional GaN-based blue LEDs with vertical p-n junctions and large active area (<1 mm2) are all greatly minimized in our structure.

KW - GaN LEDs

KW - White light generation

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U2 - 10.1109/JSTQE.2009.2017029

DO - 10.1109/JSTQE.2009.2017029

M3 - 期刊論文

AN - SCOPUS:70349308525

SN - 1077-260X

VL - 15

SP - 1292

EP - 1297

JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

IS - 4

M1 - 4957079

ER -

The structure of GaN-based transverse junction blue LED array for uniform distribution of injected current/carriers

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