The structure and photoelectrochemistry of Al, Ti Co-doped zinc oxide thin films prepared by sol-gel dip-coating process

Mao Chia Huang, Tsing Hai Wang, Shuo Han Cheng, Jing Chie Lin, Wei Hsuan Lan, Ching Chen Wu, Wen Sheng Chang

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Al, Ti co-doped ZnO (ATZO) thin films were prepared on glass substrate via sol-gel dip-coating process. Importantly, we replaced the toxic 2-methoxy-ethanol by nontoxic ethanol as a much safer reagent. The dip-coating was repeated four times and as-obtained thin films were then annealed at 500 °C for 1 h in air. We found that introducing Al and Ti dopant would transfer the principal diffraction peak from (101) to (002), decrease the vibration strength of E2 high and E1 LO, lead a relative smoother surface, blueshift the band gap, decrease resistance and increase photocurrent density. Also, doping Al and Ti arose the open circuit potential and as a result, increased the anticorrection of ATZO films.

Original languageEnglish
Pages (from-to)210-215
Number of pages6
JournalNanoscience and Nanotechnology Letters
Volume6
Issue number3
DOIs
StatePublished - Mar 2014

Keywords

  • Al
  • ATZO
  • Photoelectrochemistry.
  • Ti
  • Water Splitting
  • ZnO

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