@inproceedings{07eb4b42b8ef45209e4f198d84343ff3,
title = "The RTN measurement technique on leakage path finding in advanced high-k metal gate CMOS devices",
abstract = "In this paper, the evolution of BTI induced leakage paths has been evaluated by Ig-RTN technique and demonstrated on HK/MG CMOS devices. First, RTN measurement has been elaborated to identify the location of traps and their correlation to the leakage current. Then, the measured gate current transient can be used to analyze the formation of breakdown path. The results show that the evolution of leakage paths can be divided into three stages, i.e., (1) the early stage-only gate leakage and discrete RTN traps are observed, (2) the middle stage - the traps interacting with the percolation paths and exhibits a multi-level current-variation, and (3) the last stage - the formation of breakdown path. These findings provide useful information on the understanding of gate dielectric breakdown in high-k CMOS devices.",
author = "Hsieh, {E. R.} and Lu, {P. Y.} and Chung, {Steve S.} and Ke, {J. C.} and Yang, {C. W.} and Tsai, {C. T.} and Yew, {T. R.}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 ; Conference date: 29-06-2015 Through 02-07-2015",
year = "2015",
month = aug,
day = "25",
doi = "10.1109/IPFA.2015.7224355",
language = "???core.languages.en_GB???",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "154--157",
booktitle = "Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015",
}