The plasma diagnosis by optical emission spectroscopy for the study of phosphorus doped nanocrystalline silicone film growth

Hsiang Chih Yu; Yu Lin Hsieh; Chia Cheng Lu; Chien Chieh Lee; Jenq Yang Chang; I. Chen Chen; Tomi T. Li

doi:10.1109/CSTIC.2016.7463930

The plasma diagnosis by optical emission spectroscopy for the study of phosphorus doped nanocrystalline silicone film growth

Hsiang Chih Yu, Yu Lin Hsieh, Chia Cheng Lu, Chien Chieh Lee, Jenq Yang Chang, I. Chen Chen, Tomi T. Li

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Phosphorus doped nanocrystalline silicon (nc-Si) that deposited on a p-type silicon substrate was prepared by standard radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD). The optical emission spectroscopy (OES) is used as a diagnostic tool for analyzing the processing species and intensity in plasma. The obtained SiH - spectra are recorded to explain results from the deposition rate of nanocrystalline silicon. The deposition rate increases with increasing power when the electrode distance, working pressure and total flow rate are fixed. Moreover, we also describe ratios of Hα - / SiH - and Si - / SiH - to represent the crystallization rate index and electron temperature respectively. Based on OES results, we can utilize plasma spectra as database to monitor film properties. The spectroscopic ellipsometer (SE) and hall measurements were used to further study the growth rate, crystallinity, and electrical property of the films. Under the process conditions of 225°C substrate temperature, 11mW/cm2 power density, 300mTorr working pressure and 30mm electrode distance, the best optimized n-type nc-Si films on a 4cm2 bifacial p-type Cz silicon wafer were obtained.

Original language	English
Title of host publication	China Semiconductor Technology International Conference 2016, CSTIC 2016
Editors	Hanming Wu, Hsiang-Lan Lung, Ying Shi, Dong Chen, David Huang, Qi Wang, Kuochun Wu, Ying Zhang, Cor Claeys, Steve Liang, Ru Huang, Beichao Zhang, Peilin Song, Jiang Yan, Qinghuang Lin, Kafai Lai
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467388047
DOIs	https://doi.org/10.1109/CSTIC.2016.7463930
State	Published - 2 May 2016
Event	China Semiconductor Technology International Conference, CSTIC 2016 - Shanghai, China Duration: 13 Mar 2016 → 14 Mar 2016

Publication series

Name	China Semiconductor Technology International Conference 2016, CSTIC 2016

Conference

Conference	China Semiconductor Technology International Conference, CSTIC 2016
Country/Territory	China
City	Shanghai
Period	13/03/16 → 14/03/16

Access to Document

10.1109/CSTIC.2016.7463930

Cite this

Yu, H. C., Hsieh, Y. L., Lu, C. C., Lee, C. C., Chang, J. Y., Chen, I. C., & Li, T. T. (2016). The plasma diagnosis by optical emission spectroscopy for the study of phosphorus doped nanocrystalline silicone film growth. In H. Wu, H.-L. Lung, Y. Shi, D. Chen, D. Huang, Q. Wang, K. Wu, Y. Zhang, C. Claeys, S. Liang, R. Huang, B. Zhang, P. Song, J. Yan, Q. Lin, & K. Lai (Eds.), China Semiconductor Technology International Conference 2016, CSTIC 2016 Article 7463930 (China Semiconductor Technology International Conference 2016, CSTIC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSTIC.2016.7463930

Yu, Hsiang Chih ; Hsieh, Yu Lin ; Lu, Chia Cheng et al. / The plasma diagnosis by optical emission spectroscopy for the study of phosphorus doped nanocrystalline silicone film growth. China Semiconductor Technology International Conference 2016, CSTIC 2016. editor / Hanming Wu ; Hsiang-Lan Lung ; Ying Shi ; Dong Chen ; David Huang ; Qi Wang ; Kuochun Wu ; Ying Zhang ; Cor Claeys ; Steve Liang ; Ru Huang ; Beichao Zhang ; Peilin Song ; Jiang Yan ; Qinghuang Lin ; Kafai Lai. Institute of Electrical and Electronics Engineers Inc., 2016. (China Semiconductor Technology International Conference 2016, CSTIC 2016).

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title = "The plasma diagnosis by optical emission spectroscopy for the study of phosphorus doped nanocrystalline silicone film growth",

abstract = "Phosphorus doped nanocrystalline silicon (nc-Si) that deposited on a p-type silicon substrate was prepared by standard radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD). The optical emission spectroscopy (OES) is used as a diagnostic tool for analyzing the processing species and intensity in plasma. The obtained SiH - spectra are recorded to explain results from the deposition rate of nanocrystalline silicon. The deposition rate increases with increasing power when the electrode distance, working pressure and total flow rate are fixed. Moreover, we also describe ratios of Hα - / SiH - and Si - / SiH - to represent the crystallization rate index and electron temperature respectively. Based on OES results, we can utilize plasma spectra as database to monitor film properties. The spectroscopic ellipsometer (SE) and hall measurements were used to further study the growth rate, crystallinity, and electrical property of the films. Under the process conditions of 225°C substrate temperature, 11mW/cm2 power density, 300mTorr working pressure and 30mm electrode distance, the best optimized n-type nc-Si films on a 4cm2 bifacial p-type Cz silicon wafer were obtained.",

author = "Yu, {Hsiang Chih} and Hsieh, {Yu Lin} and Lu, {Chia Cheng} and Lee, {Chien Chieh} and Chang, {Jenq Yang} and Chen, {I. Chen} and Li, {Tomi T.}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; China Semiconductor Technology International Conference, CSTIC 2016 ; Conference date: 13-03-2016 Through 14-03-2016",

year = "2016",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Yu, HC, Hsieh, YL, Lu, CC, Lee, CC, Chang, JY, Chen, IC & Li, TT 2016, The plasma diagnosis by optical emission spectroscopy for the study of phosphorus doped nanocrystalline silicone film growth. in H Wu, H-L Lung, Y Shi, D Chen, D Huang, Q Wang, K Wu, Y Zhang, C Claeys, S Liang, R Huang, B Zhang, P Song, J Yan, Q Lin & K Lai (eds), China Semiconductor Technology International Conference 2016, CSTIC 2016., 7463930, China Semiconductor Technology International Conference 2016, CSTIC 2016, Institute of Electrical and Electronics Engineers Inc., China Semiconductor Technology International Conference, CSTIC 2016, Shanghai, China, 13/03/16. https://doi.org/10.1109/CSTIC.2016.7463930

The plasma diagnosis by optical emission spectroscopy for the study of phosphorus doped nanocrystalline silicone film growth. / Yu, Hsiang Chih; Hsieh, Yu Lin; Lu, Chia Cheng et al.
China Semiconductor Technology International Conference 2016, CSTIC 2016. ed. / Hanming Wu; Hsiang-Lan Lung; Ying Shi; Dong Chen; David Huang; Qi Wang; Kuochun Wu; Ying Zhang; Cor Claeys; Steve Liang; Ru Huang; Beichao Zhang; Peilin Song; Jiang Yan; Qinghuang Lin; Kafai Lai. Institute of Electrical and Electronics Engineers Inc., 2016. 7463930 (China Semiconductor Technology International Conference 2016, CSTIC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The plasma diagnosis by optical emission spectroscopy for the study of phosphorus doped nanocrystalline silicone film growth

AU - Yu, Hsiang Chih

AU - Hsieh, Yu Lin

AU - Lu, Chia Cheng

AU - Lee, Chien Chieh

AU - Chang, Jenq Yang

AU - Chen, I. Chen

AU - Li, Tomi T.

PY - 2016/5/2

Y1 - 2016/5/2

N2 - Phosphorus doped nanocrystalline silicon (nc-Si) that deposited on a p-type silicon substrate was prepared by standard radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD). The optical emission spectroscopy (OES) is used as a diagnostic tool for analyzing the processing species and intensity in plasma. The obtained SiH - spectra are recorded to explain results from the deposition rate of nanocrystalline silicon. The deposition rate increases with increasing power when the electrode distance, working pressure and total flow rate are fixed. Moreover, we also describe ratios of Hα - / SiH - and Si - / SiH - to represent the crystallization rate index and electron temperature respectively. Based on OES results, we can utilize plasma spectra as database to monitor film properties. The spectroscopic ellipsometer (SE) and hall measurements were used to further study the growth rate, crystallinity, and electrical property of the films. Under the process conditions of 225°C substrate temperature, 11mW/cm2 power density, 300mTorr working pressure and 30mm electrode distance, the best optimized n-type nc-Si films on a 4cm2 bifacial p-type Cz silicon wafer were obtained.

AB - Phosphorus doped nanocrystalline silicon (nc-Si) that deposited on a p-type silicon substrate was prepared by standard radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD). The optical emission spectroscopy (OES) is used as a diagnostic tool for analyzing the processing species and intensity in plasma. The obtained SiH - spectra are recorded to explain results from the deposition rate of nanocrystalline silicon. The deposition rate increases with increasing power when the electrode distance, working pressure and total flow rate are fixed. Moreover, we also describe ratios of Hα - / SiH - and Si - / SiH - to represent the crystallization rate index and electron temperature respectively. Based on OES results, we can utilize plasma spectra as database to monitor film properties. The spectroscopic ellipsometer (SE) and hall measurements were used to further study the growth rate, crystallinity, and electrical property of the films. Under the process conditions of 225°C substrate temperature, 11mW/cm2 power density, 300mTorr working pressure and 30mm electrode distance, the best optimized n-type nc-Si films on a 4cm2 bifacial p-type Cz silicon wafer were obtained.

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U2 - 10.1109/CSTIC.2016.7463930

DO - 10.1109/CSTIC.2016.7463930

M3 - 會議論文篇章

AN - SCOPUS:84974531633

T3 - China Semiconductor Technology International Conference 2016, CSTIC 2016

BT - China Semiconductor Technology International Conference 2016, CSTIC 2016

A2 - Wu, Hanming

A2 - Lung, Hsiang-Lan

A2 - Shi, Ying

A2 - Chen, Dong

A2 - Huang, David

A2 - Wang, Qi

A2 - Wu, Kuochun

A2 - Zhang, Ying

A2 - Claeys, Cor

A2 - Liang, Steve

A2 - Huang, Ru

A2 - Zhang, Beichao

A2 - Song, Peilin

A2 - Yan, Jiang

A2 - Lin, Qinghuang

A2 - Lai, Kafai

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - China Semiconductor Technology International Conference, CSTIC 2016

Y2 - 13 March 2016 through 14 March 2016

ER -

Yu HC, Hsieh YL, Lu CC, Lee CC, Chang JY, Chen IC et al. The plasma diagnosis by optical emission spectroscopy for the study of phosphorus doped nanocrystalline silicone film growth. In Wu H, Lung HL, Shi Y, Chen D, Huang D, Wang Q, Wu K, Zhang Y, Claeys C, Liang S, Huang R, Zhang B, Song P, Yan J, Lin Q, Lai K, editors, China Semiconductor Technology International Conference 2016, CSTIC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7463930. (China Semiconductor Technology International Conference 2016, CSTIC 2016). doi: 10.1109/CSTIC.2016.7463930

The plasma diagnosis by optical emission spectroscopy for the study of phosphorus doped nanocrystalline silicone film growth

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