The optimization of thermal flow field in a large-size MOCVD reactor

Chih Kai Hu, Tomi T. Li, Yi Jiun Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this paper, the effects of operating conditions in a large-size, vertical and close-spaced reactor for metalorganic chemical vapor deposition are investigated and described by simulation and analysis. The parameters are involved such as space between gas inlet and susceptor (11-20 mm), reactor wall temperature (50- 200°C), gas inlet temperature (50-200°C),and chamber pressure (100-760 torr). These listed parameters show that an optimization ideal stagnation flow can be achieved in a large-size close-spaced reactor.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2013, CSTIC 2013
Pages1021-1026
Number of pages6
Edition1
DOIs
StatePublished - 2013
EventChina Semiconductor Technology International Conference 2013, CSTIC 2013 - Shanghai, China
Duration: 19 Mar 201321 Mar 2013

Publication series

NameECS Transactions
Number1
Volume52
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceChina Semiconductor Technology International Conference 2013, CSTIC 2013
Country/TerritoryChina
CityShanghai
Period19/03/1321/03/13

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