The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures

J. C. Fan, J. C. Wang, Y. F. Chen

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Abstract

It is shown that hydrogen passivation by the photochemical vapor deposition method can have a significant influence on GaInP/GaAs heterostructures. The effect has been investigated by low-temperature photoluminescence and current-voltage and capacitance-voltage experiments. The photoluminescence measurement shows a strong increase in the luminescence intensity after hydrogenation. It is interpreted in terms of the passivation of nonradiative recombination defect centers by atomic hydrogen. The effect is also accompanied by a simultaneous decrease in the carrier concentration as shown from the capacitance-voltage measurements. In addition, the effect of hydrogenation is confirmed by the improvement of the Schottky-diode properties. These results provide concrete evidence to support the passivation of impurities and defects by atomic hydrogen in GaInP/GaAs heterostructures.

Original languageEnglish
Pages (from-to)1463-1465
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number10
DOIs
StatePublished - 8 Mar 1999

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