The monolithic integration of GaAs-AlGaAs-based unitraveling-carrier photodiodes with Zn-diffusion vertical-cavity surface-emitting lasers with extremely high data rate/power consumption ratios

Jin Wei Shi, F. M. Kuo, T. C. Hsu, Ying Jay Yang, Andrew Joel, Mark Mattingley, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

In this letter, we demonstrate the monolithic integration of high-speed GaAs-AlGaAs-based unitraveling-carrier photodiode (UTC-PD) with Zn-diffusion vertical-cavity surface-emitting lasers (VCSELs), both with very high data rate/power consumption ratios for the application to bidirectional optical interconnect. Under zero-bias operation, the integrated UTC-PD exhibits reasonable external efficiency (48%), wide 3-dB bandwidth (13 GHz), and 10-Gb/s eye-opening from low to high output photocurrents (0.1-0.4 mA) without integrating with any active ICs. Regarding the integrated Zn-diffusion VCSEL, it can achieve 10-Gb/s eye-opening under a prebias current as small as 3 mA and a very small RF driving voltage (0.25Vp-p driving voltage). The data rate/ power consumption ratio of the VCSEL is extremely high, as much as 2.4 Gb/s·mW-1.

Original languageEnglish
Pages (from-to)1444-1446
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number19
DOIs
StatePublished - 2009

Keywords

  • Photodiodes (PDs)
  • Vertical-cavity surface-emitting laser (VCSEL)

Fingerprint

Dive into the research topics of 'The monolithic integration of GaAs-AlGaAs-based unitraveling-carrier photodiodes with Zn-diffusion vertical-cavity surface-emitting lasers with extremely high data rate/power consumption ratios'. Together they form a unique fingerprint.

Cite this