TY - JOUR
T1 - The monolithic integration of GaAs-AlGaAs-based unitraveling-carrier photodiodes with Zn-diffusion vertical-cavity surface-emitting lasers with extremely high data rate/power consumption ratios
AU - Shi, Jin Wei
AU - Kuo, F. M.
AU - Hsu, T. C.
AU - Yang, Ying Jay
AU - Joel, Andrew
AU - Mattingley, Mark
AU - Chyi, Jen Inn
N1 - Funding Information:
Manuscript received April 07, 2009; revised June 25, 2009. First published July 28, 2009; current version published September 18, 2009. This work was supported by the Economic Department under Grant 97-EC-17-A-07-S1-001. J.-W. Shi, F.-M. Kuo, T.-C. Hsu, and J.-I. Chyi are with the Department of Electrical Engineering, National Central University, Taoyuan 320, Taiwan (e-mail: [email protected]). Y.-J. Yang is with the Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan. A. Joel and M. Mattingley are with IQE (Europe) Ltd., Cardiff, CF3 0LW, U.K. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LPT.2009.2028240
PY - 2009
Y1 - 2009
N2 - In this letter, we demonstrate the monolithic integration of high-speed GaAs-AlGaAs-based unitraveling-carrier photodiode (UTC-PD) with Zn-diffusion vertical-cavity surface-emitting lasers (VCSELs), both with very high data rate/power consumption ratios for the application to bidirectional optical interconnect. Under zero-bias operation, the integrated UTC-PD exhibits reasonable external efficiency (48%), wide 3-dB bandwidth (13 GHz), and 10-Gb/s eye-opening from low to high output photocurrents (0.1-0.4 mA) without integrating with any active ICs. Regarding the integrated Zn-diffusion VCSEL, it can achieve 10-Gb/s eye-opening under a prebias current as small as 3 mA and a very small RF driving voltage (0.25Vp-p driving voltage). The data rate/ power consumption ratio of the VCSEL is extremely high, as much as 2.4 Gb/s·mW-1.
AB - In this letter, we demonstrate the monolithic integration of high-speed GaAs-AlGaAs-based unitraveling-carrier photodiode (UTC-PD) with Zn-diffusion vertical-cavity surface-emitting lasers (VCSELs), both with very high data rate/power consumption ratios for the application to bidirectional optical interconnect. Under zero-bias operation, the integrated UTC-PD exhibits reasonable external efficiency (48%), wide 3-dB bandwidth (13 GHz), and 10-Gb/s eye-opening from low to high output photocurrents (0.1-0.4 mA) without integrating with any active ICs. Regarding the integrated Zn-diffusion VCSEL, it can achieve 10-Gb/s eye-opening under a prebias current as small as 3 mA and a very small RF driving voltage (0.25Vp-p driving voltage). The data rate/ power consumption ratio of the VCSEL is extremely high, as much as 2.4 Gb/s·mW-1.
KW - Photodiodes (PDs)
KW - Vertical-cavity surface-emitting laser (VCSEL)
UR - http://www.scopus.com/inward/record.url?scp=70349596059&partnerID=8YFLogxK
U2 - 10.1109/LPT.2009.2028240
DO - 10.1109/LPT.2009.2028240
M3 - 期刊論文
AN - SCOPUS:70349596059
SN - 1041-1135
VL - 21
SP - 1444
EP - 1446
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 19
ER -