Abstract
TiO 2 -doped zinc oxide thin films were deposited on glass substrates by radio frequency (RF) magnetron sputtering with TiO 2 -doped ZnO targets in an argon atmosphere. The structural properties of TiO 2 -doped ZnO films doped with different TiO 2 contents were investigated. The experimental results show that polycrystalline TiO 2 -doped ZnO films had the (0 0 2) preferred orientation. The deposition parameters such as the working pressure and substrate temperature of TiO 2 -doped ZnO films were also investigated. The crystalline structure of the TiO 2 -doped ZnO films gradually improved as the working pressure was lowered and the substrate temperature was raised. The lowest electrical resistivity for the TiO 2 -doped ZnO films was obtained when the Ti addition was 1.34 wt%; its value was 2.50 × 10 -3 Ω cm, smaller than that found in previous studies. The transmittance of the TiO 2 -doped ZnO films in the visible wavelength range was more than 80%. The optical energy gap was related to the carrier concentration, and was in the range of 3.30-3.48 eV.
| Original language | English |
|---|---|
| Pages (from-to) | 2615-2620 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 254 |
| Issue number | 9 |
| DOIs | |
| State | Published - 28 Feb 2008 |
Keywords
- Optical energy gap
- Resistivity
- Sputtering
- Zinc oxide