The influence of stress on the growth of titanium silicide thin films on (001) silicon substrates

S. L. Cheng, S. M. Chang, H. Y. Huang, Y. C. Peng, L. J. Chen, B. Y. Tsui, C. J. Tsai, S. S. Guo

Research output: Contribution to journalConference articlepeer-review


The influence of stress on the enhanced formation of C54-TiSi2 phase has been investigated. Tensile stress induced by backside CoSi2 film on the silicon substrate has been found to enhance the growth of C54-TiSi2 on (001)Si. The thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the tensilly and compressively stressed samples, respectively. From auto-correlation function analysis, the thicker a-interlayer was found to consist of a higher density of crystallites. The crystallites provide nucleation sites for C49-TiSi2 and facilitate the formation of C49-TiSi2 of small size. The larger total area of C49-TiSi2 grain boundaries supplies more nucleation sites for the phase transformation of C49- to C54-TiSi2. Therefore, the tensile stress present in the silicon substrate promotes the formation of a-interlayer and decreases the grain size of C49-TiSi2, which increases the nucleation density of the C54-TiSi2 phase. As a result, the transformation of C49- to C54-TiSi2 phase is enhanced.

Original languageEnglish
Pages (from-to)9-14
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1999
EventProceedings of the 1999 MRS Spring Meeting - Symposium N: 'Advanced Interconnects and Contacts' - San Francisco, CA, United States
Duration: 5 Apr 19997 Apr 1999


Dive into the research topics of 'The influence of stress on the growth of titanium silicide thin films on (001) silicon substrates'. Together they form a unique fingerprint.

Cite this