The influence of stress on the growth of titanium silicide thin films on (001) silicon substrates

S. L. Cheng; S. M. Chang; H. Y. Huang; Y. C. Peng; L. J. Chen; B. Y. Tsui; C. J. Tsai; S. S. Guo

doi:10.1557/proc-564-9

The influence of stress on the growth of titanium silicide thin films on (001) silicon substrates

S. L. Cheng, S. M. Chang, H. Y. Huang, Y. C. Peng, L. J. Chen, B. Y. Tsui, C. J. Tsai, S. S. Guo

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

The influence of stress on the enhanced formation of C54-TiSi₂ phase has been investigated. Tensile stress induced by backside CoSi₂ film on the silicon substrate has been found to enhance the growth of C54-TiSi₂ on (001)Si. The thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the tensilly and compressively stressed samples, respectively. From auto-correlation function analysis, the thicker a-interlayer was found to consist of a higher density of crystallites. The crystallites provide nucleation sites for C49-TiSi₂ and facilitate the formation of C49-TiSi₂ of small size. The larger total area of C49-TiSi₂ grain boundaries supplies more nucleation sites for the phase transformation of C49- to C54-TiSi₂. Therefore, the tensile stress present in the silicon substrate promotes the formation of a-interlayer and decreases the grain size of C49-TiSi₂, which increases the nucleation density of the C54-TiSi₂ phase. As a result, the transformation of C49- to C54-TiSi₂ phase is enhanced.

Original language	English
Pages (from-to)	9-14
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	564
DOIs	https://doi.org/10.1557/proc-564-9
State	Published - 1999
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium N: 'Advanced Interconnects and Contacts' - San Francisco, CA, United States Duration: 5 Apr 1999 → 7 Apr 1999

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@article{795222be2c9d46aa940d15ddc8eb5f2c,

title = "The influence of stress on the growth of titanium silicide thin films on (001) silicon substrates",

abstract = "The influence of stress on the enhanced formation of C54-TiSi2 phase has been investigated. Tensile stress induced by backside CoSi2 film on the silicon substrate has been found to enhance the growth of C54-TiSi2 on (001)Si. The thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the tensilly and compressively stressed samples, respectively. From auto-correlation function analysis, the thicker a-interlayer was found to consist of a higher density of crystallites. The crystallites provide nucleation sites for C49-TiSi2 and facilitate the formation of C49-TiSi2 of small size. The larger total area of C49-TiSi2 grain boundaries supplies more nucleation sites for the phase transformation of C49- to C54-TiSi2. Therefore, the tensile stress present in the silicon substrate promotes the formation of a-interlayer and decreases the grain size of C49-TiSi2, which increases the nucleation density of the C54-TiSi2 phase. As a result, the transformation of C49- to C54-TiSi2 phase is enhanced.",

author = "Cheng, {S. L.} and Chang, {S. M.} and Huang, {H. Y.} and Peng, {Y. C.} and Chen, {L. J.} and Tsui, {B. Y.} and Tsai, {C. J.} and Guo, {S. S.}",

year = "1999",

doi = "10.1557/proc-564-9",

language = "???core.languages.en_GB???",

volume = "564",

pages = "9--14",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1999 MRS Spring Meeting - Symposium N: 'Advanced Interconnects and Contacts' ; Conference date: 05-04-1999 Through 07-04-1999",

}

TY - JOUR

T1 - The influence of stress on the growth of titanium silicide thin films on (001) silicon substrates

AU - Cheng, S. L.

AU - Chang, S. M.

AU - Huang, H. Y.

AU - Peng, Y. C.

AU - Chen, L. J.

AU - Tsui, B. Y.

AU - Tsai, C. J.

AU - Guo, S. S.

PY - 1999

Y1 - 1999

N2 - The influence of stress on the enhanced formation of C54-TiSi2 phase has been investigated. Tensile stress induced by backside CoSi2 film on the silicon substrate has been found to enhance the growth of C54-TiSi2 on (001)Si. The thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the tensilly and compressively stressed samples, respectively. From auto-correlation function analysis, the thicker a-interlayer was found to consist of a higher density of crystallites. The crystallites provide nucleation sites for C49-TiSi2 and facilitate the formation of C49-TiSi2 of small size. The larger total area of C49-TiSi2 grain boundaries supplies more nucleation sites for the phase transformation of C49- to C54-TiSi2. Therefore, the tensile stress present in the silicon substrate promotes the formation of a-interlayer and decreases the grain size of C49-TiSi2, which increases the nucleation density of the C54-TiSi2 phase. As a result, the transformation of C49- to C54-TiSi2 phase is enhanced.

AB - The influence of stress on the enhanced formation of C54-TiSi2 phase has been investigated. Tensile stress induced by backside CoSi2 film on the silicon substrate has been found to enhance the growth of C54-TiSi2 on (001)Si. The thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the tensilly and compressively stressed samples, respectively. From auto-correlation function analysis, the thicker a-interlayer was found to consist of a higher density of crystallites. The crystallites provide nucleation sites for C49-TiSi2 and facilitate the formation of C49-TiSi2 of small size. The larger total area of C49-TiSi2 grain boundaries supplies more nucleation sites for the phase transformation of C49- to C54-TiSi2. Therefore, the tensile stress present in the silicon substrate promotes the formation of a-interlayer and decreases the grain size of C49-TiSi2, which increases the nucleation density of the C54-TiSi2 phase. As a result, the transformation of C49- to C54-TiSi2 phase is enhanced.

UR - http://www.scopus.com/inward/record.url?scp=0033279572&partnerID=8YFLogxK

U2 - 10.1557/proc-564-9

DO - 10.1557/proc-564-9

M3 - 會議論文

AN - SCOPUS:0033279572

SN - 0272-9172

VL - 564

SP - 9

EP - 14

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium N: 'Advanced Interconnects and Contacts'

Y2 - 5 April 1999 through 7 April 1999

ER -

The influence of stress on the growth of titanium silicide thin films on (001) silicon substrates

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