The impact of trimethylindium treatment time during growth interruption on the carrier dynamics of InGaN/GaN multiple quantum wells

Shih Wei Feng, Hung Cheng Lin, Jen Inn Chyi, Chin Yi Tsai, C. J. Huang, Hsiang Chen Wang, Fann Wei Yang, Yen Sheng Lin

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Solid-state lighting through light emitting diodes (LEDs) is considered the next generation white-lighting. Because green light affects the quality of white light, significant improvement of the luminescence efficiency of green InGaN LEDs are crucial. In this study, the effects of trimethylindium (TMIn) treatment time during growth interruption on the emission and carrier dynamic characteristics of InGaN/GaN multiple quantum wells with green emission were investigated. TMIn treatment during growth interruption suppresses InGaN decomposition and indium aggregation such that more homogeneous indium composition, higher effective potential level, higher energy (localized) states, stronger photoluminescence (PL) intensity, and an apparent S-shaped variation of the temperature-dependent PL peak position were observed. In addition, as the treatment time increases, the decay time and its variation both become smaller. Because indium composition within the InGaN quantum wells is more homogeneous the longer the treatment time, weaker carrier transport and carrier-localized effects lead to a shorter decay time and better recombination efficiency. The research results provide important information to optimize the performance of green and white LEDs.

Original languageEnglish
Pages (from-to)6092-6096
Number of pages5
JournalThin Solid Films
Volume519
Issue number18
DOIs
StatePublished - 1 Jul 2011

Keywords

  • Carrier dynamic
  • Gallium nitride
  • Growth interruption
  • Indium gallium nitride
  • InGaN/GaN
  • Multiple quantum wells
  • Photoluminescence
  • Trimethylindium (TMIn) treatment

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