The impact of TiN barrier on the NBTI in an advanced high-k metal-gate p-channel MOSFET

D. C. Huang, E. Ray Hsieh, J. Gong, C. F. Huang, Steve S. Chung

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This study investigates the bias temperature instability in high-k/metal-gate pMOSFETs with a TiN barrier layer sandwiched between the metal gate electrode and HfO2 dielectric and for reliability improvement of such devices. The experimental results clearly demonstrated that the diffusion mechanism of oxygen and nitrogen resulting from the post metallization treatment was the root cause of bias temperature instabilities in the p-channel MOSFETs. However, the device NBTI reliability is dependent on the nitrogen diffusion from the TiN layer, which degrades the SiO2/Si interfacial layer quality. Results show that by increasing the thickness of TiN barrier layer, the driving current will make worse the NBTI in p-MOSFET. Therefore, optimization needs to be considered for TiN as a barrier to improve the device reliabilities.

Original languageEnglish
Title of host publication24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781538617793
DOIs
StatePublished - 5 Oct 2017
Event24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 - Chengdu, China
Duration: 4 Jul 20177 Jul 2017

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2017-July

Conference

Conference24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
Country/TerritoryChina
CityChengdu
Period4/07/177/07/17

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