@inproceedings{bd9c674a865e4038a1d652bd7ab1050b,
title = "The guideline on designing a high performance nc mosfet by matching the gate capacitance and mobility enhancement",
abstract = "In this paper, to provide a guideline of designing a high-performance NCFET, we explored not only the capacitance matching between ferroelectric HZO MIM and MOSFET but also how effective mobility is affected by HZO dipoles. For capacitance matching, we observe a 50x enhancement of overall gate capacitance triggered by NC effect, while, however, it generated an adverse degradation of the mobility. This mobility degradation is induced by the remote scattering from the ferroelectric HZO dipoles. Fortunately, if suitable polarization can be formed to align the HZO dipoles, the effects of remote scattering can be mitigated. From a trade-off between gate capacitance and the mobility, an NCFET with desirable characteristics can be achieved. Besides, we showed that improved SS is possible when the derivative of the voltage across the ferroelectric MIM is negative and is corresponding to the release of energy from the ferroelectric MIM which boosts SS.",
author = "Luo, {Y. C.} and Li, {F. L.} and Hsieh, {E. R.} and Liu, {C. H.} and Chung, {Steve S.} and Chen, {T. P.} and Huang, {S. A.} and Chen, {T. J.} and Osbert Chenz",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 ; Conference date: 22-04-2019 Through 25-04-2019",
year = "2019",
month = apr,
doi = "10.1109/VLSI-TSA.2019.8804688",
language = "???core.languages.en_GB???",
series = "2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019",
}