The growth of high-quality SiGe films with an intermediate Si layer

S. W. Lee; P. S. Chen; M. J. Tsai; C. T. Chia; C. W. Liu; L. J. Chen

doi:10.1016/S0040-6090(03)01068-X

The growth of high-quality SiGe films with an intermediate Si layer

S. W. Lee, P. S. Chen, M. J. Tsai, C. T. Chia, C. W. Liu, L. J. Chen

Graduate Institute of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

9 Scopus citations

Abstract

The growth of high-quality relaxed SiGe epilayer has been achieved by introducing an intermediate Si layer in the SiGe film. It was found that intermediate Si in the SiGe film changed the mechanism of strain relaxation during the growth so that the shallow pits related to strain relief on the surface were suppressed. Such a SiGe/Si/SiGe heterostructure has a threading dislocation density of 8.9 × 10⁵ cm^-2 and a root mean square roughness of 3 nm. The intermediate Si layer was also demonstrated to act as effective nucleation site for dislocation loops to relax the mismatch strain. A mechanism of strain relaxation for this intermediate Si layer is proposed. Compared with the conventional compositionally graded buffer layer, it has the advantages of having thinner buffer layer for required degree of relaxation, smoother surface, and maintaining the threading dislocation density at the same level.

Original language	English
Pages (from-to)	302-305
Number of pages	4
Journal	Thin Solid Films
Volume	447-448
DOIs	https://doi.org/10.1016/S0040-6090(03)01068-X
State	Published - 30 Jan 2004
Event	Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States Duration: 28 Apr 2002 → 2 May 2002

Keywords

Intermediate Si layer
Root mean square roughness
SiGe films
Threading dislocation density

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10.1016/S0040-6090(03)01068-X

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title = "The growth of high-quality SiGe films with an intermediate Si layer",

abstract = "The growth of high-quality relaxed SiGe epilayer has been achieved by introducing an intermediate Si layer in the SiGe film. It was found that intermediate Si in the SiGe film changed the mechanism of strain relaxation during the growth so that the shallow pits related to strain relief on the surface were suppressed. Such a SiGe/Si/SiGe heterostructure has a threading dislocation density of 8.9 × 105 cm-2 and a root mean square roughness of 3 nm. The intermediate Si layer was also demonstrated to act as effective nucleation site for dislocation loops to relax the mismatch strain. A mechanism of strain relaxation for this intermediate Si layer is proposed. Compared with the conventional compositionally graded buffer layer, it has the advantages of having thinner buffer layer for required degree of relaxation, smoother surface, and maintaining the threading dislocation density at the same level.",

keywords = "Intermediate Si layer, Root mean square roughness, SiGe films, Threading dislocation density",

author = "Lee, {S. W.} and Chen, {P. S.} and Tsai, {M. J.} and Chia, {C. T.} and Liu, {C. W.} and Chen, {L. J.}",

note = "Funding Information: The research was supported by the National Science Council through a grant No. NSC 91-2215-E-007-015 and the Electronics Research and Service Organization.; Proceedings of the 30th International Conference on Metallurgie ; Conference date: 28-04-2002 Through 02-05-2002",

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T1 - The growth of high-quality SiGe films with an intermediate Si layer

AU - Lee, S. W.

AU - Chen, P. S.

AU - Tsai, M. J.

AU - Chia, C. T.

AU - Liu, C. W.

AU - Chen, L. J.

N1 - Funding Information: The research was supported by the National Science Council through a grant No. NSC 91-2215-E-007-015 and the Electronics Research and Service Organization.

PY - 2004/1/30

Y1 - 2004/1/30

N2 - The growth of high-quality relaxed SiGe epilayer has been achieved by introducing an intermediate Si layer in the SiGe film. It was found that intermediate Si in the SiGe film changed the mechanism of strain relaxation during the growth so that the shallow pits related to strain relief on the surface were suppressed. Such a SiGe/Si/SiGe heterostructure has a threading dislocation density of 8.9 × 105 cm-2 and a root mean square roughness of 3 nm. The intermediate Si layer was also demonstrated to act as effective nucleation site for dislocation loops to relax the mismatch strain. A mechanism of strain relaxation for this intermediate Si layer is proposed. Compared with the conventional compositionally graded buffer layer, it has the advantages of having thinner buffer layer for required degree of relaxation, smoother surface, and maintaining the threading dislocation density at the same level.

AB - The growth of high-quality relaxed SiGe epilayer has been achieved by introducing an intermediate Si layer in the SiGe film. It was found that intermediate Si in the SiGe film changed the mechanism of strain relaxation during the growth so that the shallow pits related to strain relief on the surface were suppressed. Such a SiGe/Si/SiGe heterostructure has a threading dislocation density of 8.9 × 105 cm-2 and a root mean square roughness of 3 nm. The intermediate Si layer was also demonstrated to act as effective nucleation site for dislocation loops to relax the mismatch strain. A mechanism of strain relaxation for this intermediate Si layer is proposed. Compared with the conventional compositionally graded buffer layer, it has the advantages of having thinner buffer layer for required degree of relaxation, smoother surface, and maintaining the threading dislocation density at the same level.

KW - Intermediate Si layer

KW - Root mean square roughness

KW - SiGe films

KW - Threading dislocation density

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U2 - 10.1016/S0040-6090(03)01068-X

DO - 10.1016/S0040-6090(03)01068-X

M3 - 會議論文

AN - SCOPUS:1342281314

SN - 0040-6090

VL - 447-448

SP - 302

EP - 305

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of the 30th International Conference on Metallurgie

Y2 - 28 April 2002 through 2 May 2002

ER -

The growth of high-quality SiGe films with an intermediate Si layer

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Keywords

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