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We present the 1st embedded 14nm FeFinFET NVMs, 2T1CFE. Compared to 1T1CFE array, 2T1CFE one shows 25x↑of the SN ratio, 104x↓of the PGM power, and 103x↓of READ power. The gradual tuning of conductance for 2T1CFE has been tuned linearly and symmetrically with 3x104x of the window, where 8 separated conductance states can be stored with crystal gaps in between. Continual endurance cycles for 8 states are >107 times. The retention of 8 states has been baked in 85°C for >1 month. The 8 states have also passed the PGM disturbance test. Finally, this 2T1CFE array is as electrical synapses in a very deep neural network (DNN) with 23.8 million parameters for practice, and most importantly, the 2T1CFE is also as an activation, Rectified Linear Unit (ReLU), for the first time. Compared to the 5T-CMOS ReLU, the 2T1CFE ReLU shows 70%↑of inference accuracy. Overall, 2T1CFE shows strong potential as key components in high-performance low-power inference-accelerators.
|Title of host publication||2021 Symposium on VLSI Technology, VLSI Technology 2021|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|State||Published - 2021|
|Event||41st Symposium on VLSI Technology, VLSI Technology 2021 - Virtual, Online, Japan|
Duration: 13 Jun 2021 → 19 Jun 2021
|Name||Digest of Technical Papers - Symposium on VLSI Technology|
|Conference||41st Symposium on VLSI Technology, VLSI Technology 2021|
|Period||13/06/21 → 19/06/21|
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