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The Fermi level of annealed low-temperature GaAs on Si-δ-doped GaAs grown by molecular beam epitaxy
- W. C. Lee
- , T. M. Hsu
- , S. C. Wang
- , M. N. Chang
- , J. I. Chyi
Research output: Contribution to journal › Article › peer-review
3
Scopus
citations