The failure mechanisms and phase formation for Ni, Co and Cu contacts on ion implanted (0 0 1)Si under high current stress

H. H. Lin, S. L. Cheng, L. J. Chen

Research output: Contribution to journalArticlepeer-review

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Abstract

Ultrafast diffusion of Ni and Cu atoms in p+-Si channel was observed. Contact failed at negative contact first, possibly by electron-hole recombination at the negative electrode. Ti diffusion assisted by Cu under high current density was observed in the Cu and Ti multilayered samples. Ti atoms at Ti contact cannot migrate into the diffusion channel but can be carried by Cu atoms. In addition, Cu and Ti easily interdiffused under high current density.

Original languageEnglish
Pages (from-to)161-165
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume169
Issue number1-4
DOIs
StatePublished - 2000

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