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The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

  • E. R. Hsieh
  • , P. Y. Lu
  • , Steve S. Chung
  • , K. Y. Chang
  • , C. H. Liu
  • , J. C. Ke
  • , C. W. Yang
  • , C. T. Tsai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

20 Scopus citations

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