The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

E. R. Hsieh; P. Y. Lu; Steve S. Chung; K. Y. Chang; C. H. Liu; J. C. Ke; C. W. Yang; C. T. Tsai

doi:10.1109/VLSIT.2014.6894389

The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

E. R. Hsieh, P. Y. Lu, Steve S. Chung, K. Y. Chang, C. H. Liu, J. C. Ke, C. W. Yang, C. T. Tsai

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

20 Scopus citations

Abstract

For the first time, the breakdown path induced by BTI stress can be traced from the RTN measurement. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown paths are revealed. The soft-breakdown path is in a shape like spindle, while the hard breakdown is like a snake-walking path. These two breakdown paths are reflected in a two slopes TDDB lifetime plot. These new findings on the breakdown-path formation will be helpful to the understanding of the reliability in HK CMOS devices.

Original language	English
Title of host publication	Digest of Technical Papers - Symposium on VLSI Technology
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479933310
DOIs	https://doi.org/10.1109/VLSIT.2014.6894389
State	Published - 8 Sep 2014
Event	34th Symposium on VLSI Technology, VLSIT 2014 - Honolulu, United States Duration: 9 Jun 2014 → 12 Jun 2014

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Conference

Conference	34th Symposium on VLSI Technology, VLSIT 2014
Country/Territory	United States
City	Honolulu
Period	9/06/14 → 12/06/14

Access to Document

10.1109/VLSIT.2014.6894389

Cite this

Hsieh, E. R., Lu, P. Y., Chung, S. S., Chang, K. Y., Liu, C. H., Ke, J. C., Yang, C. W., & Tsai, C. T. (2014). The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices. In Digest of Technical Papers - Symposium on VLSI Technology Article 6894389 (Digest of Technical Papers - Symposium on VLSI Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2014.6894389

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abstract = "For the first time, the breakdown path induced by BTI stress can be traced from the RTN measurement. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown paths are revealed. The soft-breakdown path is in a shape like spindle, while the hard breakdown is like a snake-walking path. These two breakdown paths are reflected in a two slopes TDDB lifetime plot. These new findings on the breakdown-path formation will be helpful to the understanding of the reliability in HK CMOS devices.",

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Hsieh, ER, Lu, PY, Chung, SS, Chang, KY, Liu, CH, Ke, JC, Yang, CW & Tsai, CT 2014, The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices. in Digest of Technical Papers - Symposium on VLSI Technology., 6894389, Digest of Technical Papers - Symposium on VLSI Technology, Institute of Electrical and Electronics Engineers Inc., 34th Symposium on VLSI Technology, VLSIT 2014, Honolulu, United States, 9/06/14. https://doi.org/10.1109/VLSIT.2014.6894389

The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices. / Hsieh, E. R.; Lu, P. Y.; Chung, Steve S. et al.
Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc., 2014. 6894389 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Hsieh ER, Lu PY, Chung SS, Chang KY, Liu CH, Ke JC et al. The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices. In Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc. 2014. 6894389. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2014.6894389

The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

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