The effect of post deposition low energy plasma bombardment on the ultra thin hydrogenated silicon oxide films

Tien I. Bao, I. Lin

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The effect of the low energy (30 eV) Ar plasma on the property of the deposited ultra thin a-SiOX:H (0≤X≤2) films is investigated by alternate deposition and post-deposition Ar plasma treatment processes in a rf hollow oval magnetron system using an in situ ellipsometer and infrared absorption spectroscopy. The results show that the low energy Ar plasma bombardment has no effect on the stoichiometric oxide film but is able to cause hydrogen bond breaking and desorption, and reduce the thickness of the hydrogenated thin film.

Original languageEnglish
Pages (from-to)6852-6854
Number of pages3
JournalJournal of Applied Physics
Volume78
Issue number11
DOIs
StatePublished - 1995

Fingerprint

Dive into the research topics of 'The effect of post deposition low energy plasma bombardment on the ultra thin hydrogenated silicon oxide films'. Together they form a unique fingerprint.

Cite this