The effect of post deposition low energy plasma bombardment on the ultra thin hydrogenated silicon oxide films

Tien I. Bao; I. Lin

doi:10.1063/1.360448

The effect of post deposition low energy plasma bombardment on the ultra thin hydrogenated silicon oxide films

Tien I. Bao, I. Lin

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The effect of the low energy (30 eV) Ar plasma on the property of the deposited ultra thin a-SiO_X:H (0≤X≤2) films is investigated by alternate deposition and post-deposition Ar plasma treatment processes in a rf hollow oval magnetron system using an in situ ellipsometer and infrared absorption spectroscopy. The results show that the low energy Ar plasma bombardment has no effect on the stoichiometric oxide film but is able to cause hydrogen bond breaking and desorption, and reduce the thickness of the hydrogenated thin film.

Original language	English
Pages (from-to)	6852-6854
Number of pages	3
Journal	Journal of Applied Physics
Volume	78
Issue number	11
DOIs	https://doi.org/10.1063/1.360448
State	Published - 1995

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title = "The effect of post deposition low energy plasma bombardment on the ultra thin hydrogenated silicon oxide films",

abstract = "The effect of the low energy (30 eV) Ar plasma on the property of the deposited ultra thin a-SiOX:H (0≤X≤2) films is investigated by alternate deposition and post-deposition Ar plasma treatment processes in a rf hollow oval magnetron system using an in situ ellipsometer and infrared absorption spectroscopy. The results show that the low energy Ar plasma bombardment has no effect on the stoichiometric oxide film but is able to cause hydrogen bond breaking and desorption, and reduce the thickness of the hydrogenated thin film.",

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AU - Bao, Tien I.

AU - Lin, I.

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N2 - The effect of the low energy (30 eV) Ar plasma on the property of the deposited ultra thin a-SiOX:H (0≤X≤2) films is investigated by alternate deposition and post-deposition Ar plasma treatment processes in a rf hollow oval magnetron system using an in situ ellipsometer and infrared absorption spectroscopy. The results show that the low energy Ar plasma bombardment has no effect on the stoichiometric oxide film but is able to cause hydrogen bond breaking and desorption, and reduce the thickness of the hydrogenated thin film.

AB - The effect of the low energy (30 eV) Ar plasma on the property of the deposited ultra thin a-SiOX:H (0≤X≤2) films is investigated by alternate deposition and post-deposition Ar plasma treatment processes in a rf hollow oval magnetron system using an in situ ellipsometer and infrared absorption spectroscopy. The results show that the low energy Ar plasma bombardment has no effect on the stoichiometric oxide film but is able to cause hydrogen bond breaking and desorption, and reduce the thickness of the hydrogenated thin film.

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DO - 10.1063/1.360448

M3 - 期刊論文

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EP - 6854

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

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ER -

The effect of post deposition low energy plasma bombardment on the ultra thin hydrogenated silicon oxide films

Abstract

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