The development of high-speed ill-nitride based light-emitting diode for visible light and plastic Optical fiber communications

Jin Wei Shi, J. K. Sheu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We review our work on GaN high-speed LED, By optimizing MQWs structure in our device, record-high data rates (5.5 Gbit/sec) over POF among all visible LEDs can be achieved. Besides, a high-lumens, high-CRI (95), and high-speed white-light LED has been demonstrated for indoor VLC.

Original languageEnglish
Title of host publication30th Annual Conference of the IEEE Photonics Society, IPC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages73-74
Number of pages2
ISBN (Electronic)9781509065783
DOIs
StatePublished - 20 Nov 2017
Event30th Annual Conference of the IEEE Photonics Society, IPC 2017 - Lake Buena Vista, United States
Duration: 1 Oct 20175 Oct 2017

Publication series

Name30th Annual Conference of the IEEE Photonics Society, IPC 2017
Volume2017-January

Conference

Conference30th Annual Conference of the IEEE Photonics Society, IPC 2017
Country/TerritoryUnited States
CityLake Buena Vista
Period1/10/175/10/17

Fingerprint

Dive into the research topics of 'The development of high-speed ill-nitride based light-emitting diode for visible light and plastic Optical fiber communications'. Together they form a unique fingerprint.

Cite this