The characteristics of EPI-SI thin film in electron cyclotron resonance plasma examined by an integrated plasma diagnostic sub-system

S. K. Jou, L. C. Hu, C. R. Yang, Y. W. Lin, C. J. Wang, T. C. Wei, C. C. Lee, J. Y. Chang, I. C. Chen, Tomi T. Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, OES (Optical emission spectrometer) was used to diagnose the variations of plasma species. QMS (Quadrupole mass spectrometry) was utilized to examine the concentration of free radicals in plasma. The epitaxial silicon thin film was deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD). The film properties related to thickness and crystallinity were investigated by Ellipsometer and Raman Spectrometer. The relationship between the film quality and plasma characteristics with respect to hydrogen dilution ratio of H2/SiH4 was also discussed. Three growth mechanisms were proposed to explain the effect on the crystallization of epi-si thin films based on adding hydrogen atoms to help the crystallization.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2016, CSTIC 2016
EditorsHanming Wu, Hsiang-Lan Lung, Ying Shi, Dong Chen, David Huang, Qi Wang, Kuochun Wu, Ying Zhang, Cor Claeys, Steve Liang, Ru Huang, Beichao Zhang, Peilin Song, Jiang Yan, Qinghuang Lin, Kafai Lai
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467388047
DOIs
StatePublished - 2 May 2016
EventChina Semiconductor Technology International Conference, CSTIC 2016 - Shanghai, China
Duration: 13 Mar 201614 Mar 2016

Publication series

NameChina Semiconductor Technology International Conference 2016, CSTIC 2016

Conference

ConferenceChina Semiconductor Technology International Conference, CSTIC 2016
Country/TerritoryChina
CityShanghai
Period13/03/1614/03/16

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