In the partially depleted (PD) SOI NMOSFET device, the floating body effect emerges due to the accumulation of excess holes in the neutral substrate region. The floating body effect will cause the current curve of kink effect in the saturation region. In this paper, we have discussed the kink effect in different situations and the branchcut method was used to separate the current component into two parts: (1) the parasitic BJT current, (2) the channel current, respectively. Then we find three different cases to analyze: (1) the body effect, (2) the parasitic BJT effect, (3) the combination effect. Furthermore, the partially covered oxide structure is used to suppress the parasitic BJT current without influencing the body effect. It can be proved that the kink effect has two different stages, the first kink effect and the second kink effect, respectively.
|Number of pages||6|
|Journal||Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an|
|State||Published - 2008|
- Branch-cut method
- Floating body effect
- Kink effect
- Partially covered oxide structure