The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors

W. C. Liao, Y. L. Chen, C. H. Chen, J. I. Chyi, Y. M. Hsin

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17 Scopus citations

Abstract

A measurement methodology involving the synchronous switching of gate to source voltage and drain to source voltage (VDS) was proposed for determining the shift of threshold voltage after an AlGaN/GaN heterostructure transistor endures high VDS off-state stress. The measurement results indicated slow electron detrapping behavior. The trap level was determined as (EC - 0.6 eV). Simulation tool was used to analyze the measurement results. The simulation results were consistent with the experimental results; and a relationship between the buffer trap and threshold voltage shift over time was observed.

Original languageEnglish
Article number033503
JournalApplied Physics Letters
Volume104
Issue number3
DOIs
StatePublished - 20 Jan 2014

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