@inproceedings{e5279200e73d47d9a349796d875c1d0c,
title = "The bandwidth-efficiency product enhancement of GaN based photodiodes by launching a low-temperature-grown recombination center in photo-absorption region",
abstract = "We demonstrated a GaN-based p-i-n photodiode by inserting a thin low-temperature-grown-GaN layer between p-type Al0.2Ga0.8N window and intrinsic GaN layer. As compared with control device, our demonstrated one can achieve 3 fold bandwidth-efficiency-products improvement.",
author = "Guo, {S. H.} and Lee, {M. L.} and Lin, {C. S.} and Sheu, {J. K.} and Wu, {Y. S.} and Sun, {C. K.} and Kuo, {C. H.} and Tun, {C. J.} and Shi, {J. W.}",
year = "2009",
language = "???core.languages.en_GB???",
isbn = "9781557528698",
series = "Optics InfoBase Conference Papers",
booktitle = "Conference on Lasers and Electro-Optics, CLEO 2009",
note = "Conference on Lasers and Electro-Optics, CLEO 2009 ; Conference date: 31-05-2009 Through 05-06-2009",
}