We demonstrated a GaN-based p-i-n photodiode by inserting a thin low-temperature-grown-GaN layer between p-type Al0.2Ga0.8N window and intrinsic GaN layer. As compared with control device, our demonstrated one can achieve 3 fold bandwidth-efficiency-products improvement.
|Title of host publication||Conference on Lasers and Electro-Optics, CLEO 2009|
|State||Published - 2009|
|Event||Conference on Lasers and Electro-Optics, CLEO 2009 - Baltimore, MD, United States|
Duration: 31 May 2009 → 5 Jun 2009
|Name||Optics InfoBase Conference Papers|
|Conference||Conference on Lasers and Electro-Optics, CLEO 2009|
|Period||31/05/09 → 5/06/09|