The ballistic transport and reliability of the SOI and strained-SOI nMOSFETs with 65nm node and beyond technology

E. R. Hsieh, Derrick W. Chang, S. S. Chung, Y. H. Lin, C. H. Tsai, C. T. Tsai, G. H. Ma

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Fingerprint

Dive into the research topics of 'The ballistic transport and reliability of the SOI and strained-SOI nMOSFETs with 65nm node and beyond technology'. Together they form a unique fingerprint.

Keyphrases

Engineering