The application of in-situ prepared polyaniline film as a hole blocking layer in polymeric organic light emitting diode

Yeh Yuh-Ruey; Hsiao Hsia-Tsai; Wu Chun-Guey

doi:10.1016/S0379-6779(00)00878-X

The application of in-situ prepared polyaniline film as a hole blocking layer in polymeric organic light emitting diode

Yeh Yuh-Ruey, Hsiao Hsia-Tsai, Wu Chun-Guey

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The in-situ prepared polyaniline film on aniline-silane modified ITO has a better electrochemical activity and stability compare to the solution casted polyaniline film. The polymeric organic light emitting diode (POLED) using this in-situ prepared polyaniline film as a hole blocking layer and MEH-PPV as an emitting polymer has a turn on voltage of ca. 7.0 V, which is 2.0 V lower than that of POLED without polyaniline layer.

Original language	English
Pages (from-to)	1651-1652
Number of pages	2
Journal	Synthetic Metals
Volume	121
Issue number	1-3
DOIs	https://doi.org/10.1016/S0379-6779(00)00878-X
State	Published - 15 Mar 2001

Keywords

Light emitting diode
Polyaniline
Self-adsorption
Silane

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10.1016/S0379-6779(00)00878-X

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abstract = "The in-situ prepared polyaniline film on aniline-silane modified ITO has a better electrochemical activity and stability compare to the solution casted polyaniline film. The polymeric organic light emitting diode (POLED) using this in-situ prepared polyaniline film as a hole blocking layer and MEH-PPV as an emitting polymer has a turn on voltage of ca. 7.0 V, which is 2.0 V lower than that of POLED without polyaniline layer.",

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T1 - The application of in-situ prepared polyaniline film as a hole blocking layer in polymeric organic light emitting diode

AU - Yuh-Ruey, Yeh

AU - Hsia-Tsai, Hsiao

AU - Chun-Guey, Wu

PY - 2001/3/15

Y1 - 2001/3/15

N2 - The in-situ prepared polyaniline film on aniline-silane modified ITO has a better electrochemical activity and stability compare to the solution casted polyaniline film. The polymeric organic light emitting diode (POLED) using this in-situ prepared polyaniline film as a hole blocking layer and MEH-PPV as an emitting polymer has a turn on voltage of ca. 7.0 V, which is 2.0 V lower than that of POLED without polyaniline layer.

AB - The in-situ prepared polyaniline film on aniline-silane modified ITO has a better electrochemical activity and stability compare to the solution casted polyaniline film. The polymeric organic light emitting diode (POLED) using this in-situ prepared polyaniline film as a hole blocking layer and MEH-PPV as an emitting polymer has a turn on voltage of ca. 7.0 V, which is 2.0 V lower than that of POLED without polyaniline layer.

KW - Light emitting diode

KW - Polyaniline

KW - Self-adsorption

KW - Silane

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U2 - 10.1016/S0379-6779(00)00878-X

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JO - Synthetic Metals

JF - Synthetic Metals

IS - 1-3

ER -

The application of in-situ prepared polyaniline film as a hole blocking layer in polymeric organic light emitting diode

Abstract

Keywords

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