The application of a heating baffle in a high temperature vacuum reactor

Kuei Fang Chen, Jun Ching Chiu, Chih Kai Hu, Tomi T. Li, Pi Chen Tung

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The temperature uniformity of thin film process is an important issue for susceptor in high temperature vacuum system. When the temperature of process is extremely high the uniformity is not only difficult to control, but also hard to maintain. In order to raise the temperature utilization at high temperature which is higher than 1300°C, the heating baffle is introduced for this purpose. As the result, the thermal radiation is economized about 1% in the chamber which contains six pieces of two-inch wafers. On the other hand, the heating baffle also improves the temperature uniformity of the wafer area on susceptor. The results show the temperature difference decreases to 6°C after using the heating baffle, and it shows that an optimum temperature uniformity can be achieved in a self-assembly reactor.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2017, CSTIC 2017
EditorsSteve Liang, Ying Shi, Ru Huang, Qinghuang Lin, David Huang, Hanming Wu, Yuchun Wang, Cor Claeys, Kafai Lai, Ying Zhang, Peilin Song, Viyu Shi, Zhen Guo
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509066940
DOIs
StatePublished - 4 May 2017
Event2017 China Semiconductor Technology International Conference, CSTIC 2017 - Shanghai, China
Duration: 12 Mar 201713 Mar 2017

Publication series

NameChina Semiconductor Technology International Conference 2017, CSTIC 2017

Conference

Conference2017 China Semiconductor Technology International Conference, CSTIC 2017
Country/TerritoryChina
CityShanghai
Period12/03/1713/03/17

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