This work investigates the temperature dependence, from 300K to 77K, of the output power, PAE, and linearity for SiGe HBTs with and without SIC. The NADC π/4DQPSK signal is used to analyze the linearity of SiGe HBTs. For device without SIC, the heterojunction barrier effect becomes more propound, which seriously reduces the current gain and cutoff frequency at cryogenic temperatures. The output power, PAE and linearity at 2.4 GHz decrease conspicuously with decreasing operation temperatures. This barrier effect can be negligible in SiGe HBT with SIC and thus the device achieves better power and linearity performance at cryogenic temperatures.
|Number of pages||4|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|State||Published - 2006|
|Event||2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States|
Duration: 11 Jun 2006 → 16 Jun 2006
- Cryogenic temperatures
- Heterojunction barrier effect