Testing Disturbance Faults in Various NAND Flash Memories

Chih Sheng Hou, Jin Fu Li

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


NAND flash memory is one popular non-volatile memory. Flash memory is prone to disturbance faults due to its specific mechanism of functional operations. Furthermore, different NAND flash memories might be different on the array organizations and the supported functional operations. For example, some NAND flash memories can support the random program operation, but some cannot; some NAND flash memories with single-page wordlines and some with multiple-page wordlines. The differences on the array organizations and the functional operations result in the heavy influence on the testing of disturbance faults. In this paper, therefore, we analyze the disturbance faults for NAND flash memories with different array organizations and functional operations. Also, test algorithms for covering the disturbance faults in various types of NAND flash memories are proposed.

Original languageEnglish
Pages (from-to)643-652
Number of pages10
JournalJournal of Electronic Testing: Theory and Applications (JETTA)
Issue number6
StatePublished - 3 Dec 2014


  • Disturbance fault
  • Flash memory
  • March test
  • NAND flash


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