Testing and Reliability of Computing-In Memories: Solutions and Challenges

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9 Scopus citations

Abstract

Various computing-in-memory designs have been proposed as a possible computing architecture for the data-centric computing applications. Existing memories such as random access memories, flash memories, and emerging memories can be modified as computing-in-memories (CIMs) to support computing operations. In CIMs, computing operations typically are more complex and have smaller sensing margin than the read operation. Furthermore, storage devices of emerging memories are more unreliable than transistors. Those make the testing and reliability of CIMs become worse. In this paper, we first review existing testing and reliability-enhancement methods for CIMs. Then, testing and reliability challenges of CIMs are discussed.

Original languageEnglish
Title of host publicationProceedings - 2022 IEEE International Test Conference in Asia, ITC-Asia 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages55-60
Number of pages6
ISBN (Electronic)9781665455237
DOIs
StatePublished - 2022
Event6th IEEE International Test Conference in Asia, ITC-Asia 2022 - Taipei, Taiwan
Duration: 24 Aug 202226 Aug 2022

Publication series

NameProceedings - 2022 IEEE International Test Conference in Asia, ITC-Asia 2022

Conference

Conference6th IEEE International Test Conference in Asia, ITC-Asia 2022
Country/TerritoryTaiwan
CityTaipei
Period24/08/2226/08/22

Keywords

  • RAM
  • RRNM
  • STT-MRAM
  • computing in memory
  • reliability
  • test

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