Temperature dependent study of InAlAs-InP/GaAsSb/InP double heterojunction bipolar transistors

Che Ming Wang, Yue Ming Hsin, Haijun Zhu, J. M. Kuo, Y. C. Kao

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Abstract

InAlAs-InPGaAsSbInP double heterojunction bipolar transistors (HBTs) with InAlAs-InP composite emitter have been grown, fabricated, and characterized at various temperatures from 77 to 400 K. The InAlAs-InP composite emitter structure effectively reduces electron pileup in the InPGaAsSb base-emitter junction and hence increases current gain, especially in the low-base-current region. The turn-on voltage shows a slightly different temperature dependence (-1.66 mVK) from conventional InGaAs based HBTs due to the composite emitter. The activation energy study for the base (0.74 eV) and collector currents (0.98 eV) indicates the high quality of the base layer and the effect of InAlAs-InP composite emitter.

Original languageEnglish
Article number232102
JournalApplied Physics Letters
Volume90
Issue number23
DOIs
StatePublished - 2007

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