Temperature dependent performance of GaN Schottky diode rectifiers

X. A. Cao; G. T. Dang; A. P. Zhang; F. Ren; S. J. Pearton; C. M. Lee; C. C. Chuo; J. I. Chyi; G. C. Chi; J. Han; S. N.G. Chu; R. G. Wilson

Temperature dependent performance of GaN Schottky diode rectifiers

X. A. Cao, G. T. Dang, A. P. Zhang, F. Ren, S. J. Pearton, C. M. Lee, C. C. Chuo, J. I. Chyi, G. C. Chi, J. Han, S. N.G. Chu, R. G. Wilson

Research output: Contribution to journal › Conference article › peer-review

Abstract

GaN Schottky diode rectifiers with reverse breakdown (V_RB)>2 kV were fabricated on epitaxial layers grown on sapphire substrates. The temperature dependence of V_RB and forward turn-on voltage (V_F) were measured. The V_RB values display a negative temperature coefficient (-0.92 V·K^-1 for 25-50 °C; -0.17 V·K^-1 for 50-150 °C), indicative of surface- or defect-assisted breakdown. The V_F values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.

Original language	English
Pages (from-to)	II/-
Journal	Materials Science Forum
Volume	338
State	Published - 2000
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: 10 Oct 1999 → 15 Oct 1999

Cite this

@article{18f36d9b7c8e438c845c8e63964644af,

title = "Temperature dependent performance of GaN Schottky diode rectifiers",

abstract = "GaN Schottky diode rectifiers with reverse breakdown (VRB)>2 kV were fabricated on epitaxial layers grown on sapphire substrates. The temperature dependence of VRB and forward turn-on voltage (VF) were measured. The VRB values display a negative temperature coefficient (-0.92 V·K-1 for 25-50 °C; -0.17 V·K-1 for 50-150 °C), indicative of surface- or defect-assisted breakdown. The VF values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.",

author = "Cao, {X. A.} and Dang, {G. T.} and Zhang, {A. P.} and F. Ren and Pearton, {S. J.} and Lee, {C. M.} and Chuo, {C. C.} and Chyi, {J. I.} and Chi, {G. C.} and J. Han and Chu, {S. N.G.} and Wilson, {R. G.}",

year = "2000",

language = "???core.languages.en_GB???",

volume = "338",

pages = "II/--",

journal = "Materials Science Forum",

issn = "0255-5476",

note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

}

TY - JOUR

T1 - Temperature dependent performance of GaN Schottky diode rectifiers

AU - Cao, X. A.

AU - Dang, G. T.

AU - Zhang, A. P.

AU - Ren, F.

AU - Pearton, S. J.

AU - Lee, C. M.

AU - Chuo, C. C.

AU - Chyi, J. I.

AU - Chi, G. C.

AU - Han, J.

AU - Chu, S. N.G.

AU - Wilson, R. G.

PY - 2000

Y1 - 2000

N2 - GaN Schottky diode rectifiers with reverse breakdown (VRB)>2 kV were fabricated on epitaxial layers grown on sapphire substrates. The temperature dependence of VRB and forward turn-on voltage (VF) were measured. The VRB values display a negative temperature coefficient (-0.92 V·K-1 for 25-50 °C; -0.17 V·K-1 for 50-150 °C), indicative of surface- or defect-assisted breakdown. The VF values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.

AB - GaN Schottky diode rectifiers with reverse breakdown (VRB)>2 kV were fabricated on epitaxial layers grown on sapphire substrates. The temperature dependence of VRB and forward turn-on voltage (VF) were measured. The VRB values display a negative temperature coefficient (-0.92 V·K-1 for 25-50 °C; -0.17 V·K-1 for 50-150 °C), indicative of surface- or defect-assisted breakdown. The VF values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.

UR - http://www.scopus.com/inward/record.url?scp=0342572440&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0342572440

SN - 0255-5476

VL - 338

SP - II/-

JO - Materials Science Forum

JF - Materials Science Forum

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

Temperature dependent performance of GaN Schottky diode rectifiers

Abstract

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