Temperature dependent performance of GaN Schottky diode rectifiers

X. A. Cao, G. T. Dang, A. P. Zhang, F. Ren, S. J. Pearton, C. M. Lee, C. C. Chuo, J. I. Chyi, G. C. Chi, J. Han, S. N.G. Chu, R. G. Wilson

Research output: Contribution to journalConference articlepeer-review


GaN Schottky diode rectifiers with reverse breakdown (VRB)>2 kV were fabricated on epitaxial layers grown on sapphire substrates. The temperature dependence of VRB and forward turn-on voltage (VF) were measured. The VRB values display a negative temperature coefficient (-0.92 V·K-1 for 25-50 °C; -0.17 V·K-1 for 50-150 °C), indicative of surface- or defect-assisted breakdown. The VF values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.

Original languageEnglish
Pages (from-to)II/-
JournalMaterials Science Forum
StatePublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 10 Oct 199915 Oct 1999


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