Temperature-dependent characteristics of 1.3-μm AlGaInAs-InP lasers with multiquantum barriers at the guiding layers

Jen Wei Pan; Ming Hong Chen; Jen Inn Chyi; Tien Tsorng Shih

doi:10.1109/68.730474

Temperature-dependent characteristics of 1.3-μm AlGaInAs-InP lasers with multiquantum barriers at the guiding layers

Jen Wei Pan, Ming Hong Chen, Jen Inn Chyi, Tien Tsorng Shih

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Strain-compensated 1.3-μm AlGaInAs-InP multiquantum-well (MQW) lasers with multiquantum barriers at both the n- and p-type guiding layers are comprehensively studied. The laser exhibits a characteristic temperature as high as 95 K and degradation in slope efficiency as low as -1.06 dB in the temperature range from 25 °C to 75 °C. The characteristic temperature of transparency current density is deduced to be 129 K. It is also found that the internal loss increases slowly with temperature, while the temperature dependence of the internal quantum efficiency dominates the degradation of the external quantum efficiency due to the degradation of the stimulated recombination, and significant increase of electron and hole leakage at high temperature.

Original language	English
Pages (from-to)	1700-1702
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	10
Issue number	12
DOIs	https://doi.org/10.1109/68.730474
State	Published - Dec 1998

Keywords

Cavity length
Multiple-quantum well
Semiconductor lasers
Strain compensation

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@article{aa28fd106d0a421494dac2d2a83f034f,

title = "Temperature-dependent characteristics of 1.3-μm AlGaInAs-InP lasers with multiquantum barriers at the guiding layers",

abstract = "Strain-compensated 1.3-μm AlGaInAs-InP multiquantum-well (MQW) lasers with multiquantum barriers at both the n- and p-type guiding layers are comprehensively studied. The laser exhibits a characteristic temperature as high as 95 K and degradation in slope efficiency as low as -1.06 dB in the temperature range from 25 °C to 75 °C. The characteristic temperature of transparency current density is deduced to be 129 K. It is also found that the internal loss increases slowly with temperature, while the temperature dependence of the internal quantum efficiency dominates the degradation of the external quantum efficiency due to the degradation of the stimulated recombination, and significant increase of electron and hole leakage at high temperature.",

keywords = "Cavity length, Multiple-quantum well, Semiconductor lasers, Strain compensation",

author = "Pan, {Jen Wei} and Chen, {Ming Hong} and Chyi, {Jen Inn} and Shih, {Tien Tsorng}",

note = "Funding Information: Manuscript received June 2, 1998; revised August 10, 1998. This work was supported by the National Science Council of R.O.C. under Contract NSC87-2215-E008-012 and by Chunghwa Telecom Company, Ltd. under Contract TL-86-5106. J.-W. Pan, M.-H. Chen, and J.-I. Chyi are with the Department of Electrical Engineering, National Central University, Chung-Li 320, Taiwan, R.O.C. T.-T. Shih is with Telecommunication Labs, Chunghwa Telecom Co., Ltd., Yang-Mei 326, Taiwan, R.O.C. Publisher Item Identifier S 1041-1135(98)08769-2.",

year = "1998",

month = dec,

doi = "10.1109/68.730474",

language = "???core.languages.en_GB???",

volume = "10",

pages = "1700--1702",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

number = "12",

}

TY - JOUR

T1 - Temperature-dependent characteristics of 1.3-μm AlGaInAs-InP lasers with multiquantum barriers at the guiding layers

AU - Pan, Jen Wei

AU - Chen, Ming Hong

AU - Chyi, Jen Inn

AU - Shih, Tien Tsorng

N1 - Funding Information: Manuscript received June 2, 1998; revised August 10, 1998. This work was supported by the National Science Council of R.O.C. under Contract NSC87-2215-E008-012 and by Chunghwa Telecom Company, Ltd. under Contract TL-86-5106. J.-W. Pan, M.-H. Chen, and J.-I. Chyi are with the Department of Electrical Engineering, National Central University, Chung-Li 320, Taiwan, R.O.C. T.-T. Shih is with Telecommunication Labs, Chunghwa Telecom Co., Ltd., Yang-Mei 326, Taiwan, R.O.C. Publisher Item Identifier S 1041-1135(98)08769-2.

PY - 1998/12

Y1 - 1998/12

N2 - Strain-compensated 1.3-μm AlGaInAs-InP multiquantum-well (MQW) lasers with multiquantum barriers at both the n- and p-type guiding layers are comprehensively studied. The laser exhibits a characteristic temperature as high as 95 K and degradation in slope efficiency as low as -1.06 dB in the temperature range from 25 °C to 75 °C. The characteristic temperature of transparency current density is deduced to be 129 K. It is also found that the internal loss increases slowly with temperature, while the temperature dependence of the internal quantum efficiency dominates the degradation of the external quantum efficiency due to the degradation of the stimulated recombination, and significant increase of electron and hole leakage at high temperature.

AB - Strain-compensated 1.3-μm AlGaInAs-InP multiquantum-well (MQW) lasers with multiquantum barriers at both the n- and p-type guiding layers are comprehensively studied. The laser exhibits a characteristic temperature as high as 95 K and degradation in slope efficiency as low as -1.06 dB in the temperature range from 25 °C to 75 °C. The characteristic temperature of transparency current density is deduced to be 129 K. It is also found that the internal loss increases slowly with temperature, while the temperature dependence of the internal quantum efficiency dominates the degradation of the external quantum efficiency due to the degradation of the stimulated recombination, and significant increase of electron and hole leakage at high temperature.

KW - Cavity length

KW - Multiple-quantum well

KW - Semiconductor lasers

KW - Strain compensation

UR - http://www.scopus.com/inward/record.url?scp=0032300339&partnerID=8YFLogxK

U2 - 10.1109/68.730474

DO - 10.1109/68.730474

M3 - 期刊論文

AN - SCOPUS:0032300339

SN - 1041-1135

VL - 10

SP - 1700

EP - 1702

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

ER -

Temperature-dependent characteristics of 1.3-μm AlGaInAs-InP lasers with multiquantum barriers at the guiding layers

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Keywords

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