Temperature dependence on p-Cu 2 O thin film electrochemically deposited onto copper substrate

Mao Chia Huang, Tsinghai Wang, Wen Sheng Chang, Jing Chie Lin, Ching Chen Wu, I. Chen Chen, Kun Cheng Peng, Sheng Wei Lee

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


In this study, we attempted to quantitatively interpret the effect of electrodeposition temperature on Cu 2 O film's microstructure, optical and photoelectrochemical properties. Three deposit temperatures (35, 50 and 65 °C) were taken into consideration. Based upon our observations, a general trend was concluded. That is, Cu 2 O films deposited at lower temperature (35 °C) always possessed a high degree of preferential orientation, smaller pyramidal-like crystal size, high photolumminance and a higher carrier concentration. These properties made Cu 2 O films deposited at 35 °C a better photoelectrochemical performance with photocurrent density of -0.22 mA/cm 2 bias -0.4 V vs. SCE. This value is about 35% higher than those Cu 2 O films deposited at higher temperatures. Observed higher photocurrent density is likely due to the intrinsic of a higher charge carrier concentration, and a lower resistance within Cu 2 O crystal and at Cu 2 O/electrolyte interface.

Original languageEnglish
Pages (from-to)369-377
Number of pages9
JournalApplied Surface Science
StatePublished - 15 May 2014


  • Electrochemical deposition
  • Electroplating temperature
  • Photoelectrochemistry


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