Temperature dependence of GaN high breakdown voltage diode rectifiers

J. I. Chyi, C. M. Lee, C. C. Chuo, X. A. Cao, G. T. Dang, A. P. Zhang, F. Ren, S. J. Pearton, S. N.G. Chu, R. G. Wilson

Research output: Contribution to journalArticlepeer-review

33 Scopus citations


The temperature dependence of reverse breakdown voltage (VRB) and forward turn-on voltage (VF) of GaN Schottky diode rectifiers is reported. The VRB values display a negative temperature coefficient (-0.92 V K-1 for 25-50°C; -0.17 V K-1 for 50-150°C), indicative of surface- or defect-assisted breakdown. The VF values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.

Original languageEnglish
Pages (from-to)613-617
Number of pages5
JournalSolid-State Electronics
Issue number4
StatePublished - 1 Apr 2000


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