Temperature dependence of GaN high breakdown voltage diode rectifiers

J. I. Chyi; C. M. Lee; C. C. Chuo; X. A. Cao; G. T. Dang; A. P. Zhang; F. Ren; S. J. Pearton; S. N.G. Chu; R. G. Wilson

doi:10.1016/S0038-1101(99)00183-5

Temperature dependence of GaN high breakdown voltage diode rectifiers

J. I. Chyi, C. M. Lee, C. C. Chuo, X. A. Cao, G. T. Dang, A. P. Zhang, F. Ren, S. J. Pearton, S. N.G. Chu, R. G. Wilson

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

The temperature dependence of reverse breakdown voltage (V_RB) and forward turn-on voltage (V_F) of GaN Schottky diode rectifiers is reported. The V_RB values display a negative temperature coefficient (-0.92 V K^-1 for 25-50°C; -0.17 V K^-1 for 50-150°C), indicative of surface- or defect-assisted breakdown. The V_F values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.

Original language	English
Pages (from-to)	613-617
Number of pages	5
Journal	Solid-State Electronics
Volume	44
Issue number	4
DOIs	https://doi.org/10.1016/S0038-1101(99)00183-5
State	Published - 1 Apr 2000

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@article{260826430f5844c99ebd5c3e303d0359,

title = "Temperature dependence of GaN high breakdown voltage diode rectifiers",

abstract = "The temperature dependence of reverse breakdown voltage (VRB) and forward turn-on voltage (VF) of GaN Schottky diode rectifiers is reported. The VRB values display a negative temperature coefficient (-0.92 V K-1 for 25-50°C; -0.17 V K-1 for 50-150°C), indicative of surface- or defect-assisted breakdown. The VF values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.",

author = "Chyi, {J. I.} and Lee, {C. M.} and Chuo, {C. C.} and Cao, {X. A.} and Dang, {G. T.} and Zhang, {A. P.} and F. Ren and Pearton, {S. J.} and Chu, {S. N.G.} and Wilson, {R. G.}",

note = "Funding Information: The work at UF is partially supported by a DARPA/EPRI grant (D. Radack/J. Melcher), no. MDA 98-072-1-006, monitored by ONR (J. C. Zolper).",

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volume = "44",

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TY - JOUR

T1 - Temperature dependence of GaN high breakdown voltage diode rectifiers

AU - Chyi, J. I.

AU - Lee, C. M.

AU - Chuo, C. C.

AU - Cao, X. A.

AU - Dang, G. T.

AU - Zhang, A. P.

AU - Ren, F.

AU - Pearton, S. J.

AU - Chu, S. N.G.

AU - Wilson, R. G.

N1 - Funding Information: The work at UF is partially supported by a DARPA/EPRI grant (D. Radack/J. Melcher), no. MDA 98-072-1-006, monitored by ONR (J. C. Zolper).

PY - 2000/4/1

Y1 - 2000/4/1

N2 - The temperature dependence of reverse breakdown voltage (VRB) and forward turn-on voltage (VF) of GaN Schottky diode rectifiers is reported. The VRB values display a negative temperature coefficient (-0.92 V K-1 for 25-50°C; -0.17 V K-1 for 50-150°C), indicative of surface- or defect-assisted breakdown. The VF values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.

AB - The temperature dependence of reverse breakdown voltage (VRB) and forward turn-on voltage (VF) of GaN Schottky diode rectifiers is reported. The VRB values display a negative temperature coefficient (-0.92 V K-1 for 25-50°C; -0.17 V K-1 for 50-150°C), indicative of surface- or defect-assisted breakdown. The VF values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.

UR - http://www.scopus.com/inward/record.url?scp=0033907597&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(99)00183-5

DO - 10.1016/S0038-1101(99)00183-5

M3 - 期刊論文

AN - SCOPUS:0033907597

VL - 44

SP - 613

EP - 617

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 4

ER -

Temperature dependence of GaN high breakdown voltage diode rectifiers

Abstract

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