Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers

A. P. Zhang; X. A. Cao; G. Dang; F. Ren; J. Han; J. I. Chyi; C. M. Lee; C. C. Chuo; T. E. Nee

doi:10.1557/proc-622-t2.7.1

Temperature dependence and current transport mechanisms in Al_xGa_1-xN Schottky rectifiers

A. P. Zhang
, X. A. Cao
, G. Dang
, F. Ren
, J. Han
, J. I. Chyi
, C. M. Lee
, C. C. Chuo
, T. E. Nee

Research output: Contribution to journal › Article › peer-review

Abstract

GaN and Al_0.25Ga_0.75N lateral Schottky rectifiers were fabricated either with (GAN) or without (AlGaN) edge termination. The reverse breakdown voltage V_B (3.1 kV for GaN with both p⁺ guard rings and metal overlap edge terminations; 4.3 kV for Al_0.25Ga_0.75N without edge termination) displayed a negative temperature coefficient of-6.0 ± 0.4 V.K^-1 for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100A·cm^-2 was ∼5 V for GaN and ∼7.5 V for AlGaN. The on-state resistances, R_ON were 0.13 Ωcm² for GaN and 2.3 Ωcm² for AlGaN, producing figures-or-merit (V_RB)²/R_ON of 73.9 and 8.2 MW.cm^-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias.

Original language	English
Pages (from-to)	T271-T276
Journal	Materials Research Society Symposium - Proceedings
Volume	622
DOIs	https://doi.org/10.1557/proc-622-t2.7.1
State	Published - 2000

Access to Document

10.1557/proc-622-t2.7.1

Cite this

@article{2f9ab61b16d4439d81632425f7e655ed,

title = "Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers",

abstract = "GaN and Al0.25Ga0.75N lateral Schottky rectifiers were fabricated either with (GAN) or without (AlGaN) edge termination. The reverse breakdown voltage VB (3.1 kV for GaN with both p+ guard rings and metal overlap edge terminations; 4.3 kV for Al0.25Ga0.75N without edge termination) displayed a negative temperature coefficient of-6.0 ± 0.4 V.K-1 for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100A·cm-2 was ∼5 V for GaN and ∼7.5 V for AlGaN. The on-state resistances, RON were 0.13 Ωcm2 for GaN and 2.3 Ωcm2 for AlGaN, producing figures-or-merit (VRB)2/RON of 73.9 and 8.2 MW.cm-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias.",

author = "Zhang, \{A. P.\} and Cao, \{X. A.\} and G. Dang and F. Ren and J. Han and Chyi, \{J. I.\} and Lee, \{C. M.\} and Chuo, \{C. C.\} and Nee, \{T. E.\}",

note = "Funding Information: The work at UF is partially supported by a DARPA/EPRI grant (D. Radack/J. Melcher), MDA 972-98-1-0006, monitored by ONR (J.C. Zolper) and by NSF-DMR 9732865 (L. Hess). Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed-Martin company, for the US Department of Energy under contract DEAL04-94-AL 85000.",

year = "2000",

doi = "10.1557/proc-622-t2.7.1",

language = "???core.languages.en\_GB???",

volume = "622",

pages = "T271--T276",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

}

TY - JOUR

T1 - Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers

AU - Zhang, A. P.

AU - Cao, X. A.

AU - Dang, G.

AU - Ren, F.

AU - Han, J.

AU - Chyi, J. I.

AU - Lee, C. M.

AU - Chuo, C. C.

AU - Nee, T. E.

N1 - Funding Information: The work at UF is partially supported by a DARPA/EPRI grant (D. Radack/J. Melcher), MDA 972-98-1-0006, monitored by ONR (J.C. Zolper) and by NSF-DMR 9732865 (L. Hess). Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed-Martin company, for the US Department of Energy under contract DEAL04-94-AL 85000.

PY - 2000

Y1 - 2000

N2 - GaN and Al0.25Ga0.75N lateral Schottky rectifiers were fabricated either with (GAN) or without (AlGaN) edge termination. The reverse breakdown voltage VB (3.1 kV for GaN with both p+ guard rings and metal overlap edge terminations; 4.3 kV for Al0.25Ga0.75N without edge termination) displayed a negative temperature coefficient of-6.0 ± 0.4 V.K-1 for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100A·cm-2 was ∼5 V for GaN and ∼7.5 V for AlGaN. The on-state resistances, RON were 0.13 Ωcm2 for GaN and 2.3 Ωcm2 for AlGaN, producing figures-or-merit (VRB)2/RON of 73.9 and 8.2 MW.cm-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias.

AB - GaN and Al0.25Ga0.75N lateral Schottky rectifiers were fabricated either with (GAN) or without (AlGaN) edge termination. The reverse breakdown voltage VB (3.1 kV for GaN with both p+ guard rings and metal overlap edge terminations; 4.3 kV for Al0.25Ga0.75N without edge termination) displayed a negative temperature coefficient of-6.0 ± 0.4 V.K-1 for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100A·cm-2 was ∼5 V for GaN and ∼7.5 V for AlGaN. The on-state resistances, RON were 0.13 Ωcm2 for GaN and 2.3 Ωcm2 for AlGaN, producing figures-or-merit (VRB)2/RON of 73.9 and 8.2 MW.cm-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias.

UR - https://www.scopus.com/pages/publications/0034428506

U2 - 10.1557/proc-622-t2.7.1

DO - 10.1557/proc-622-t2.7.1

M3 - 期刊論文

AN - SCOPUS:0034428506

SN - 0272-9172

VL - 622

SP - T271-T276

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers

Abstract

Access to Document

Fingerprint

Cite this

Temperature dependence and current transport mechanisms in Al_xGa_1-xN Schottky rectifiers